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Model experiments on growth modes and interface electronics of CuInS_2: Ultrathin epitaxial films on GaAs(100) substrates

Calvet, Wolfram and Lewerenz, Hans-Joachim and Pettenkofer, Christian (2014) Model experiments on growth modes and interface electronics of CuInS_2: Ultrathin epitaxial films on GaAs(100) substrates. Physica Status Solidi A, 211 (9). pp. 1981-1990. ISSN 1862-6300. https://resolver.caltech.edu/CaltechAUTHORS:20141017-073927206

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Abstract

The heterojunction formation between GaAs(100) and CuInS_2 is investigated using ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS), and low energy electron diffraction (LEED). Thin layers of CuInS_2 films were deposited in a step-by-step process on wet chemically pre-treated GaAs(100) surfaces by molecular beam epitaxy (MBE) with a total upper thickness limit of the films of 60 nm. The film growth starts from a sulfur-rich GaAs(100) surface. XPS core level analysis of the substrate and film reveals initially a transitory growth regime with the formation of a Ga containing chalcopyrite phase. With increasing film thickness, a change in stoichiometry from Cu-poor to Cu-rich composition is observed. The evaluation of the LEED data shows the occurrence of a recrystallization process where the film orientation follows that of the substrate with the epitaxial relation GaAs{100}||CuInS_2{001}. On the completed junction with a CuInS_2 film thickness of 60 nm, the band discontinuities of the GaAs(100)/CuInS_2 structure measured with XPS and UPS were determined as ΔE_V = 0.1 ± 0.1 eV and ΔE_C = 0.0 ± 0.1 eV, thus showing a type II band alignment.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1002/pssa.201330429 DOIArticle
http://onlinelibrary.wiley.com/doi/10.1002/pssa.201330429/abstractPublisherArticle
ORCID:
AuthorORCID
Lewerenz, Hans-Joachim0000-0001-8433-9471
Alternate Title:Model experiments on growth modes and interface electronics of CuInS2: Ultrathin epitaxial films on GaAs(100) substrates
Additional Information:© 2014 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim. Received 31 October 2013, revised 16 June 2014, accepted 20 June 2014, Published online 23 July 2014. The authors gratefully acknowledge technical support by S. Kubala, H. Sehnert, A. Porsinger, and U. Pettenkofer and a valuable discussion with C. Lehmann, D. Tonti, R. Hunger, and I. Lauermann.
Group:JCAP
Subject Keywords:band alignment, chalcopyrites, CuInS2, interfaces, thin films
Issue or Number:9
Record Number:CaltechAUTHORS:20141017-073927206
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20141017-073927206
Official Citation:Calvet, W., Lewerenz, H.-J. and Pettenkofer, C. (2014), Model experiments on growth modes and interface electronics of CuInS2: Ultrathin epitaxial films on GaAs(100) substrates. Phys. Status Solidi A, 211: 1981–1990. doi: 10.1002/pssa.201330429
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:50466
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:17 Oct 2014 18:32
Last Modified:08 Oct 2019 22:08

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