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Optimum Carrier Concentration in n-Type PbTe Thermoelectrics

Pei, Yanzhong and Gibbs, Zachary M. and Gloskovskii, Andrei and Balke, Benjamin and Zeier, Wolfgang G. and Snyder, G. Jeffrey (2014) Optimum Carrier Concentration in n-Type PbTe Thermoelectrics. Advanced Energy Materials, 4 (13). Art. No. 1400486. ISSN 1614-6832. https://resolver.caltech.edu/CaltechAUTHORS:20141027-073512931

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Abstract

Taking La- and I-doped PbTe as an example, the current work shows the effects of optimizing the thermoelectric figure of merit, zT, by controlling the doping level. The high doping effectiveness allows the carrier concentration to be precisely designed and prepared to control the Fermi level. In addition to the Fermi energy tuning, La-doping modifies the conduction band, leading to an increase in the density of states effective mass that is confirmed by transport, infrared reflectance and hard X-ray photoelectron spectroscopy measurements. Taking such a band structure modification effect into account, the electrical transport properties can then be well-described by a self-consistent single non-parabolic Kane band model that yields an approximate (m*T)^(1.5) dependence of the optimal carrier concentration for a peak power factor in both doping cases. Such a simple temperature dependence also provides an effective approximation of carrier concentration for a peak zT and helps to explain, the effects of other strategies such as lowering the lattice thermal conductivity by nanostructuring or alloying in n-PbTe, which demonstrates a practical guide for fully optimizing thermoelectric materials in the entire temperature range. The principles used here should be equally applicable to other thermoelectric materials.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1002/aenm.201400486DOIArticle
http://onlinelibrary.wiley.com/doi/10.1002/aenm.201400486/abstractPublisherArticle
ORCID:
AuthorORCID
Snyder, G. Jeffrey0000-0003-1414-8682
Additional Information:© 2014 WILEY-VCH Verlag GmbH & Co. Received: March 20, 2014. Revised: April 8, 2014. Published online: May 7, 2014. Y.P. acknowledges the Recruitment Program of Global Experts (1000 Plan) of China, the program for professor of special appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning, Pujiang project of Shanghai Science and Technology Commission (13PJ1408400) and the Bayer-Tongji Eco-Construction & Material Academy (TB20140001) for funding support. G.J.S. acknowledges NASA-JPL and DARPA Nano Materials Program for funding support. Z.M.G. would like to acknowledge the Molecular Materials Research Lab (MMRC) at Caltech for use of instruments for optical data in this work. W.G.Z. is a recipient of a fellowship from the Carl Zeiss-Stiftung and acknowledges financial support through the Excellence Initiative (DFG/GSC 266). The HAXPES instrument at beam line P09 is jointly operated by the University of Würzburg (R. Claessen), the University of Mainz (C. Felser), and DESY. Funding by the Federal Ministry of Education and Research (BMBF) under Contract Nos. 05KS7UM1, 05K10UMA, 05KS7WW3, and 05K10WW1 was gratefully acknowledged. This article was modified after initial online publication to correct errors in the byline and affiliation. In the original version, Andrei Gloskovskii appeared in the affiliation section, but was inadvertently omitted from the byline. The affiliation for Benjamin Balke has also been corrected.
Funders:
Funding AgencyGrant Number
Shanghai Institutions of Higher Learning, Pujiang project of Shanghai Science and Technology Commission13PJ1408400
Bayer-Tongji Eco-Construction & Material AcademyTB20140001
NASA/JPLUNSPECIFIED
Defense Advanced Research Projects Agency (DARPA) Nano Materials ProgramUNSPECIFIED
Carl Zeiss-StiftungUNSPECIFIED
Deutsche Forschungsgemeinschaft (DFG)GSC 266
Federal Ministry of Education and Research (BMBF)05KS7UM1
Federal Ministry of Education and Research (BMBF)05K10UMA
Federal Ministry of Education and Research (BMBF)05KS7WW3
Federal Ministry of Education and Research (BMBF)05K10WW1
Issue or Number:13
Record Number:CaltechAUTHORS:20141027-073512931
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20141027-073512931
Official Citation:Pei, Y., Gibbs, Z. M., Gloskovskii, A., Balke, B., Zeier, W. G., Snyder, J. (2014). Optimum Carrier Concentration in n-Type PbTe Thermoelectrics. Adv. Energy Mater., 4: 1400486. doi: 10.1002/aenm.201400486
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:50823
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:27 Oct 2014 15:43
Last Modified:03 Oct 2019 07:27

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