Control of carbon nanotube morphology by change of applied bias field during growth

Abstract

Carbon nanotube morphology has been engineered via simple control of applied voltage during dc plasma chemical vapor deposition growth. Below a critical applied voltage, a nanotube configuration of vertically aligned tubes with a constant diameter is obtained. Above the critical voltage, a nanocone-type configuration is obtained. The strongly field-dependent transition in morphology is attributed primarily to the plasma etching and decrease in the size of nanotube-nucleating catalyst particles. A two-step control of applied voltage allows a creation of dual-structured nanotube morphology consisting of a broad base nanocone (~200 nm dia.) with a small diameter nanotube (~7 nm) vertically emanating from the apex of the nanocone, which may be useful for atomic force microscopy.