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Modification of the surface band-bending of a silicon CCD for low-energy electron detection

Smith, Aimée L. and Yu, Qiuming and Elliot, S. T. and Tombrello, T. A. and Nikzad, Shouleh (1996) Modification of the surface band-bending of a silicon CCD for low-energy electron detection. In: Control of Semiconductor Surfaces and Interfaces. Materials Research Society Conference Proceedings. No.448. Materials Research Society , Cambridge, MA, pp. 177-183. ISBN 1-55899-352-5. https://resolver.caltech.edu/CaltechAUTHORS:20141028-133726362

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Abstract

Silicon CCDs have limited sensitivity to particles and photons with short penetration depth, due to the surface depletion caused by the inherent positive charge in the native oxide. Because of surface depletion, internally-generated electrons are trapped near the irradiated surface and therefore cannot be transported to the detection circuitry. This deleterious surface potential can be eliminated by low-temperature molecular beam epitaxial (MBE) growth of a delta-doped layer on the Si surface. This effect has been demonstrated through achievement of 100% internal quantum efficiency for UV photons detected with delta-doped CCDs. In this paper, we will discuss the modification of the band bending near the CCD surface by low-temperature MBE and report the application of delta-doped CCDs to low-energy electron detection. We show that modification of the surface can greatly improve sensitivity to low-energy electrons. Measurements comparing the response of delta-doped CCDs with untreated CCDs were made in the 50 eV-1.5 keV energy range. For electrons with energies below 300 eV, the signal from untreated CCDs was below the detection limit for our apparatus, and data are presented only for the response of delta-doped CCDs at these energies. The effects of multiple electron hole pair (EHP) production and backscattering on the observed signals are discussed.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1557/PROC-448-177DOIArticle
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8079608&fileId=S194642740028398XPublisherArticle
Additional Information:© Materials Research Society 1997. The authors gratefully acknowledge the invaluable assistance of Drs.,L. Douglas Bell, Michael Hoenk, Steve Manion, Tom Van Zandt, Mr. Walter Proniawicz, and Professor LC. Kimerling. The work presented in this paper was performed by the Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, and was jointly funded by the Caltech President's fund and the NASA Office of Space Science.
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Funding AgencyGrant Number
Caltech President’s FundUNSPECIFIED
NASAUNSPECIFIED
Series Name:Materials Research Society Conference Proceedings
Issue or Number:448
Record Number:CaltechAUTHORS:20141028-133726362
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20141028-133726362
Official Citation:Aimée L. Smith, Qiuming Yu, S. T. Elliott, T.A. Tombrello and Shouleh Nikzad (1996). Modification of the Surface Band-Bending of A Silicon CCD for Low-Energy Electron Detection. MRS Proceedings, 448, 177 doi:10.1557/PROC-448-177.
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:50950
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:28 Oct 2014 21:11
Last Modified:03 Oct 2019 07:28

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