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MeV Ion Implantation in Electronic Materials

Tombrello, T. A. (1992) MeV Ion Implantation in Electronic Materials. In: Materials Modification by Energetic Atoms and Ions. Materials Research Society Symposia Proceedings. No.268. Materials Research Society , Pittsburgh, PA, pp. 273-280. ISBN 978-1558991637.

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Using MeV ions for the modification of electronic materials offers a number of advantages: minimizing surface damage; implantation into completed devices – for example, through contacts or photoresist layers; producing controlled radiation damage for flux pinning where the ions pass completely through the sample and thus do not modify its chemical nature; and enhancing the electronic excitation of the target material versus collisional damage, as in adhesion enhancement processes. In all cases, however, one requires a detailed understanding of the new damage mechanisms that occur and how they can be modified in a controlled way by annealing. In this report I shall present examples from a number of our experiments: resistivity and index of refraction modification in semiconductors; adhesion enhancement; mixing of multilayer structures; and modification of the electronic properties of insulators and superconductors.

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Additional Information:© 1992 Materials Research Society. Supported in part by the National Science Foundation [Grant DMR90-11230] The work reviewed here has involved the efforts of many people in my group and a large assortment of outside collaborators. Since there are far too many to list here, I direct the reader's attention to the references to the original work that are cited for each example. The funding sources are also as diverse as the coworkers; in addition to the NSF grant listed at the beginning of the article (DMR90-11230], I acknowledge contributions from the NSF's MRG program (DMR88-11795], Lawrence Livermore National Laboratory, Schlumberger-Doll Research, and AT&T Bell Laboratories.
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Lawrence Livermore National LaboratoryUNSPECIFIED
Schlumberger-Doll ResearchUNSPECIFIED
AT&T Bell LaboratoriesUNSPECIFIED
Series Name:Materials Research Society Symposia Proceedings
Issue or Number:268
Record Number:CaltechAUTHORS:20141029-083721216
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Official Citation:T. A. Tombrello (1992). MeV Ion Implantation in Electronic Materials. MRS Proceedings, 268, 273 doi:10.1557/PROC-268-273.
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:50982
Deposited By: Ruth Sustaita
Deposited On:29 Oct 2014 16:17
Last Modified:10 Nov 2021 19:03

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