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Enhancement of adhesion by megaelectronvolt ion bombardment

Tombrello, T. A. (1985) Enhancement of adhesion by megaelectronvolt ion bombardment. Materials Science and Engineering, 69 (2). pp. 443-447. ISSN 0025-5416. http://resolver.caltech.edu/CaltechAUTHORS:20141029-094918002

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Abstract

It has been demonstrated that the adhesion of a wide variety of film-substrate combinations can be dramatically improved by megaelectronvolt ion bombardment. Although the results are similar in most cases, it is becoming clear that several mechanisms may be involved in the process. For example, in the ^(35)Cl^(4+) ion bombardment (6–21 MeV) of gold films on vitreous SiO_2 substrates, there are two distinct dose regimes where enhanced adhesion occurs. One is centered at 10^(13) ^(35)Cl^(4+) ions cm^(−2), coincident with the formation of bombardment-induced surface cracks in the SiO_2. The other occurs above an ion-energy-dependent threshold (about 10^(14) ^(35)Cl^(4+) ions cm^(−2)). We have also observed that the adhesion enhancement for gold on GaAs depends strongly on the type and level of doping. For example, both silicon- and tellurium-doped n-type GaAs have a sharp threshold in enhanced adhesion near 10^(14) ^(35)Cl^(4+) ions cm^(−2) for 18 MeV ^(35)Cl^+ ion irradiation. However, although chromium-compensation-doped p-type GaAs reaches the same final adhesion levels, there is a smooth increase versus dose starting below 10^(12) ^(35)Cl^(4+) ions cm^(−2). Several possible mechanisms will be discussed and compared with the data.


Item Type:Article
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http://dx.doi.org/10.1016/0025-5416(85)90345-3 DOIArticle
http://www.sciencedirect.com/science/article/pii/0025541685903453PublisherArticle
Additional Information:© 1985 Elsevier Sequoia. Received September 17, 1984. Paper presented at the International Conference on Surface Modification of Metals by Ion Beams, Heidelberg, F.R.G., September 17-21, 1984. The author thanks his colleagues at California Institute of Technology for the use of recent data from our research group: R. P. Livi, M. H. Mendenhall, S. Paine, C. R. Shi, T. Vreeland, Jr., and C. R. Wie. This work was supported in part by the National Science Foundation under Grant DMR83-18274.
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NSFDMR83-18274
Record Number:CaltechAUTHORS:20141029-094918002
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20141029-094918002
Official Citation:T.A. Tombrello, Enhancement of adhesion by megaelectronvolt ion bombardment, Materials Science and Engineering, Volume 69, Issue 2, March 1985, Pages 443-447, ISSN 0025-5416, http://dx.doi.org/10.1016/0025-5416(85)90345-3. (http://www.sciencedirect.com/science/article/pii/0025541685903453)
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:50994
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:29 Oct 2014 17:21
Last Modified:29 Oct 2014 17:21

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