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Characterization of high-energy heavy-ion implanted InP crystals by a variety of techniques

Xiong, Fulin and Nieh, C. W. and Tombrello, T. A. and Jamieson, D. N. and Vreeland, T., Jr. (1989) Characterization of high-energy heavy-ion implanted InP crystals by a variety of techniques. Vacuum, 39 (2-4). pp. 177-182. ISSN 0042-207X. http://resolver.caltech.edu/CaltechAUTHORS:20141029-113534421

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Abstract

MeV ion implantation into InP compound semiconductor crystals with 5 MeV nitrogen ions has been investigated. The subsequent characterization was undertaken by a variety of techniques such as nuclear resonant reaction analysis, channeling Rutherford backscattering spectrometry, X-ray rocking curve measurement and cross-sectional transmission electron microscopy. These techniques have clearly revealed substantial changes in structural properties and radiation-induced damage distribution as well as the influence of post-implantation annealing in ^(15)N ion-implanted InP samples. The results from these measurements, which are presented in this paper, are shown to be consistent with each other, and have led to a coherent description of the effects of the implantation and subsequent annealing. In a practical sense this has demonstrated the complementary nature of the analytical capabilities of all of these techniques used for the investigation of the processes involved in high-energy heavy-ion implantation.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1016/0042-207X(89)90190-5 DOIArticle
http://www.sciencedirect.com/science/article/pii/0042207X89901905PublisherArticle
Additional Information:© 1989 Elsevier B.V. This work is supported in part by the National Science Foundation (DMR84-21119). Special Issue: Ion Beam Interactions with Matter
Funders:
Funding AgencyGrant Number
NSFDMR84-21119
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Brown BagBB-65
Record Number:CaltechAUTHORS:20141029-113534421
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20141029-113534421
Official Citation:Xiong, F., Nieh, C. W., Tombrello, T. A., Jamieson, D. N., & Vreeland Jr, T. (1989). Characterization of high-energy heavy-ion implanted InP crystals by a variety of techniques. Vacuum, 39(2–4), 177-182. doi: http://dx.doi.org/10.1016/0042-207X(89)90190-5
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:51003
Collection:CaltechAUTHORS
Deposited By: Joanne McCole
Deposited On:29 Oct 2014 19:23
Last Modified:25 Mar 2015 16:14

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