Xiong, Fulin and Nieh, C. W. and Tombrello, T. A. and Jamieson, D. N. and Vreeland, T., Jr. (1989) Characterization of high-energy heavy-ion implanted InP crystals by a variety of techniques. Vacuum, 39 (2-4). pp. 177-182. ISSN 0042-207X. doi:10.1016/0042-207X(89)90190-5. https://resolver.caltech.edu/CaltechAUTHORS:20141029-113534421
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Abstract
MeV ion implantation into InP compound semiconductor crystals with 5 MeV nitrogen ions has been investigated. The subsequent characterization was undertaken by a variety of techniques such as nuclear resonant reaction analysis, channeling Rutherford backscattering spectrometry, X-ray rocking curve measurement and cross-sectional transmission electron microscopy. These techniques have clearly revealed substantial changes in structural properties and radiation-induced damage distribution as well as the influence of post-implantation annealing in ^(15)N ion-implanted InP samples. The results from these measurements, which are presented in this paper, are shown to be consistent with each other, and have led to a coherent description of the effects of the implantation and subsequent annealing. In a practical sense this has demonstrated the complementary nature of the analytical capabilities of all of these techniques used for the investigation of the processes involved in high-energy heavy-ion implantation.
| Item Type: | Article | |||||||||
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| Additional Information: | © 1989 Elsevier B.V. This work is supported in part by the National Science Foundation (DMR84-21119). Special Issue: Ion Beam Interactions with Matter | |||||||||
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| Issue or Number: | 2-4 | |||||||||
| DOI: | 10.1016/0042-207X(89)90190-5 | |||||||||
| Record Number: | CaltechAUTHORS:20141029-113534421 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20141029-113534421 | |||||||||
| Official Citation: | Xiong, F., Nieh, C. W., Tombrello, T. A., Jamieson, D. N., & Vreeland Jr, T. (1989). Characterization of high-energy heavy-ion implanted InP crystals by a variety of techniques. Vacuum, 39(2–4), 177-182. doi: http://dx.doi.org/10.1016/0042-207X(89)90190-5 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 51003 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | INVALID USER | |||||||||
| Deposited On: | 29 Oct 2014 19:23 | |||||||||
| Last Modified: | 10 Nov 2021 19:04 |
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