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Fabrication of GaAs/AlGaAs Quantum Well Lasers with MeV Oxygen Ion Implantation

Xiong, Fulin and Tombrello, T. A. and Wang, H. and Chen, T. R. and Chen, H. Z. and Morkoç, H. and Yariv, A. (1989) Fabrication of GaAs/AlGaAs Quantum Well Lasers with MeV Oxygen Ion Implantation. In: Advances in materials, processing, and devices in III-V compound semiconductors. Materials Research Society symposia proceedings. No.144. Materials Research Society , Pittsburgh, PA, pp. 367-372. ISBN 1-55899-017-8. https://resolver.caltech.edu/CaltechAUTHORS:20141031-102240661

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Abstract

MeV oxygen ion implantation in GaAs/ AlGaAs has been shown to provide a simple and very promising technique for quantum well laser fabrication. A 10μm stripe single quantum well (SQW) graded-index separation confinement heterostructure (GRINSCH) laser made in this way has achieved high performance with high quantum differential efficiency, low threshold current and good electrical isolation characteristics. MeV oxygen ion implantation with optimum thermal annealing produces a deep buried electrical isolation layer in n-type GaAs and reduces optical absorption in GaAs/AlGaAs quantum well structures. Ion implantation stimulated compositional disordering as well as implanted oxygen-related deep level traps may be considered as important effects for electrical and optical modification of interfaces in GaAs and AlGaAs.


Item Type:Book Section
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1557/PROC-144-367 DOIArticle
http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8167238&fileId=S194642740051121XPublisherArticle
Additional Information:© 1989 Materials Research Society. This work was supported in part by the National Science Foundation [DMR86-15641] and the Office of Navy Research [Contract N00014-85-0032]. The assistance from M. Mittlstein in the optical measurement is acknowledged.
Funders:
Funding AgencyGrant Number
NSFDMR86-15641
Office of Naval Research (ONR)N00014-85-0032
Series Name:Materials Research Society symposia proceedings
Issue or Number:144
Record Number:CaltechAUTHORS:20141031-102240661
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20141031-102240661
Official Citation: Fulin Xiong, T. A. Tombrello, H. Wang, T. R. Chen, H. Z. Chen, H. Morkoc and A. Yariv (1988). Fabrication of GaAs/AlGaAs Quantum Well Lasers with MeV Oxygen Ion Implantation. MRS Proceedings, 144, 367 doi:10.1557/PROC-144-367
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:51116
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:31 Oct 2014 18:56
Last Modified:03 Oct 2019 07:29

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