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Computer simulation of sticking and penetration of copper atoms on copper substrates

Shapiro, M. H. and Tombrello, T. A. (1986) Computer simulation of sticking and penetration of copper atoms on copper substrates. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 18 (1-6). pp. 355-359. ISSN 0168-583X. http://resolver.caltech.edu/CaltechAUTHORS:20141031-132048650

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Abstract

The multiple interaction (MI) codes SPUT1 and SPUT2 have been used to investigate, the penetration of copper substrates by copper atoms with energies between 1 and 1000 eV. Initial simulations were carried out on ideal, single crystal targets ((100) face) that were 4–6 atomic layers thick. Below 10 eV essentially all normally incident copper atoms stuck to the crystallite surface, but did not penetrate the surface layer. From 10 eV up the normally incident ions buried themselves within the crystallite, and (from 50 eV up) caused sputtering of target atoms. Four target layers were sufficient to stop most incident ions with energies up to 500 eV. Additional target layers were needed to stop more energetic incident atoms. Stopping profiles and sputtering yields are presented as a function of energy. Some additional simulations were carried out with (111) and (110) single crystal targets to determine the effect of packing on penetration and sticking. Simulations also were carried out at 1 eV incident energy on partially covered targets to determine the effect of surface irregularities on sticking and penetration. Complete sticking was observed for these partially covered targets.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1016/S0168-583X(86)80058-1DOIArticle
http://www.sciencedirect.com/science/article/pii/S0168583X86800581PublisherArticle
Additional Information:© 1986 Published by Elsevier B.V. Supported in part by the National Science Foundation [DMR83-06541 at Caltech and DMR83-06548 at CSUF. The authors wish to thank the staff of the CSU Fullerton computer center for their assistance. We also are very grateful to the State University Data Center for providing the Cyber-760 CPU time needed for these calculation.
Funders:
Funding AgencyGrant Number
NSFDMR83-06541
NSFDMR83-06548
Record Number:CaltechAUTHORS:20141031-132048650
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20141031-132048650
Official Citation:Shapiro, M. H., & Tombrello, T. A. (1986). Computer simulation of sticking and penetration of copper atoms on copper substrates. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 18(1–6), 355-359. doi: http://dx.doi.org/10.1016/S0168-583X(86)80058-1
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:51130
Collection:CaltechAUTHORS
Deposited By: Jason Perez
Deposited On:03 Nov 2014 20:35
Last Modified:03 Nov 2014 20:35

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