Bardin, T. T. and Pronko, J. G. and Junga, F. A. and Opyd, W. G. and Mardinly, A. J. and Xiong, F. and Tombrello, T. A. (1987) Electrical and structural changes in GaAs crystals from high-energy, heavy-ion implants. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 24-25 (1). pp. 548-553. ISSN 0168-583X. doi:10.1016/0168-583X(87)90705-1. https://resolver.caltech.edu/CaltechAUTHORS:20141031-132156179
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Abstract
Changes in electrical properties and crystal structure due to MeV, heavy-ion implants in GaAs have been studied. The electrical properties of the implanted samples were obtained by measuring I–V characteristic curves on and through implanted regions and Seebeck potential differences across implanted regions. The changes in crystal structure induced by the implants were measured using RBS channeling experiments and XTEM micrographs. The RBS and XTEM results indicated that MeV ion doses > 1 × 10^(15) ions/cm^2 amorphized the crystal structure at the end of ion range. After annealing the GaAs sample, the amorphized region returned to a crystalline state but with many defect centers. In n-type doped GaAs both Cl^(3+) and O^(3+) ions induced acceptor like centers which became inactive after rapid thermal annealing. Most of the active electrical carriers can be attributed to crystal defects.
| Item Type: | Article | |||||||||
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| Additional Information: | © Elsevier Science Publishers B.V. The authors would like to thank S.K. Ichiki for preparing the XTEM samples. This research was supported by the Lockheed Independent Research Fund and at CAL TECH by NSF Grant DMR 83-18274. | |||||||||
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| Issue or Number: | 1 | |||||||||
| DOI: | 10.1016/0168-583X(87)90705-1 | |||||||||
| Record Number: | CaltechAUTHORS:20141031-132156179 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20141031-132156179 | |||||||||
| Official Citation: | Bardin, T. T., Pronko, J. G., Junga, F. A., Opyd, W. G., Mardinly, A. J., Xiong, F., & Tombrello, T. A. (1987). Electrical and structural changes in GaAs crystals from high-energy, heavy-ion implants. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 24–25, Part 1(0), 548-553. doi: http://dx.doi.org/10.1016/0168-583X(87)90705-1 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 51131 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | INVALID USER | |||||||||
| Deposited On: | 03 Nov 2014 20:47 | |||||||||
| Last Modified: | 10 Nov 2021 19:06 |
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