Itoh, Noriaki and Nakayama, Takeyoshi and Tombrello, T. A. (1985) Electronic-excitation mechanism in sputtering induced by high density electronic excitation. Physics Letters A, 108A (9). pp. 480-484. ISSN 0375-9601. http://resolver.caltech.edu/CaltechAUTHORS:20141031-151119774
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Abstract
On the basis of the assumption that two holes are attractive in a dense electron-hole plasma near the surface because of the Anderson negative-U interaction, the yield of laser- and ion-induced sputtering in the electronic excitation regime was calculated as a function of electron-hole concentration in a plasma. It is found that the model gives an order-of-magnitude account of the yields of these two sputtering processes.
| Item Type: | Article | |||||||||
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| Additional Information: | © 1985 Elsevier Science Publishers B.V. Received 10 December 1984; revised manuscript received 13 February 1985; accepted for publication 13 February 1985. Available online 10 September 2002. Supported in part by the Grant-in-Aid for Scientific Research of the Ministry of Education, Science and Culture and the National Science Foundation [DMR83-18274] and Schlumberger-Doll Research. | |||||||||
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| Record Number: | CaltechAUTHORS:20141031-151119774 | |||||||||
| Persistent URL: | http://resolver.caltech.edu/CaltechAUTHORS:20141031-151119774 | |||||||||
| Official Citation: | Noriaki Itoh, Takeyoshi Nakayama, T.A. Tombrello, Electronic-excitation mechanism in sputtering induced by high density electronic excitation, Physics Letters A, Volume 108, Issue 9, 29 April 1985, Pages 480-484, ISSN 0375-9601, http://dx.doi.org/10.1016/0375-9601(85)90045-3. (http://www.sciencedirect.com/science/article/pii/0375960185900453) | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 51141 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | Ruth Sustaita | |||||||||
| Deposited On: | 31 Oct 2014 22:44 | |||||||||
| Last Modified: | 31 Oct 2014 22:44 |
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