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Sputtering of silicon and its compounds in the electronic stopping region

Qiu, Yuanxun and Griffith, J. E. and Meng, Wen Jin and Tombrello, T. A. (1983) Sputtering of silicon and its compounds in the electronic stopping region. Radiation Effects and Defects in Solids, 70 (1-4). pp. 231-236. ISSN 1042-0150. doi:10.1080/00337578308219218.

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We have sputtered silicon, silicon dioxide, and silicon nitride with chlorine ions at 5 MeV and 20 MeV. While the yield from the silicon target was immeasurably low, the insulating compounds exhibited the enhanced yields observed in other insulating targets. The yield follows the electronic stopping power and seems to be independent of the target's thermal properties. Some of the data suggest that the enhanced sputtering mechanism may be active in extremely thin films (≥3 monolayers).

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Additional Information:© 1983 Gordon and Breach Science Publishers, Inc. Received August 2, 1982. Supported in part by NASA (NAGW-202 and -148) and the NSF (CHE81-13273 and PHY79-23638). We thank P. K. Half and B. H. Cooper for their comments and suggestions. R. Miles gave valuable assistance in the laboratory. B. X. Liu performed the X-ray studies of the bombarded quartz. I. Suni and M. Batur provided the silicon nitride films.
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Issue or Number:1-4
Record Number:CaltechAUTHORS:20141103-134758430
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Official Citation:Sputtering of silicon and its compounds in the electronic stopping region Yuanxun Qiu, J. E. Griffith, Wen Jin Meng, T. A. Tombrello Radiation Effects Vol. 70, Iss. 1-4, 1983
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:51186
Deposited By: Tony Diaz
Deposited On:03 Nov 2014 21:53
Last Modified:10 Nov 2021 19:07

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