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MeV ion beam processing of III–V compound semiconductors

Xiong, Fulin and Tombrello, T. A. (1989) MeV ion beam processing of III–V compound semiconductors. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 40-41 . pp. 526-532. ISSN 0168-583X. doi:10.1016/0168-583X(89)91038-0.

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MeV ion beam processing provides a very promising technology for 3-dimensional device fabrication and property modification of deeply buried interfaces; its application to III–V compound semiconductors will be presented. Using MeV oxygen ion implantation one can produce deeply buried insulating layers in n-type GaAs crystals, and induce compositional disordering in GaAs/GaAlAs superlattices. It has been employed, as a simple and promising technique, for fabricating high efficiency single quantum well GRINSCH GaAs/AlGaAs lasers. Formation of deeply buried high resistivity layers in n-type InP has also been investigated. A comprehensive study of MeV-ion-implanted InP by a variety of analytical techniques has provided a coherent picture of implanted distribution, structural transition, crystalline damage, and lattice strain in the implanted InP crystals, and has led to a good understanding of the physical processes involved in MeV ion implantation and subsequent thermal annealing. Application of MeV nitrogen ion implanted InP to laser devices will also be discussed.

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Additional Information:© 1989 Elsevier Science Publishers B.V. Supported in pan by National Science Foundation [DMR84-21119 and (DMR86-15641]. The authors would like to express their gratitude to H. Wang, T.R. Chen and A. Yariv for their cooperation on device fabrication, to T. Vreeland, Simon C.W. Nieh. C.C. Ahn and C. Garland for their help on the sample characterization work and many valuable discussions.
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Official Citation:Fulin Xiong, T.A. Tombrello, MeV ion beam processing of III–V compound semiconductors, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Volumes 40–41, Part 1, 2 April 1989, Pages 526-532, ISSN 0168-583X, (
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:51216
Deposited By: Tony Diaz
Deposited On:04 Nov 2014 16:50
Last Modified:10 Nov 2021 19:07

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