Ingemarsson, P. Anders and Hedin, Allan and Tombrello, Thomas A. and Johnson, Robert E. (1989) Electronic effects in MeV ion tracks affecting thin film adhesion. Radiation Effects and Defects in Solids, 108 (2-4). pp. 205-209. ISSN 1042-0150. doi:10.1080/10420158908230309. https://resolver.caltech.edu/CaltechAUTHORS:20141104-101347699
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Abstract
An ion track model was applied to describe MeV ion induced adhesion improvement of Au thin films on amorphous SiO_2. Good agreement with experimental data was found when assuming that ion track energy densities above and below a certain interval do not contribute to the adhesion enhancement; damage effects detrimental to adhesion may be associated with the high energy densities in the vicinity of the ion path.
| Item Type: | Article | |||||||||
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| Additional Information: | © 1989 Gordon and Breach Science Publishers, Inc. Received: 16 Nov 1988; published online: 19 Aug 2006. This work was supported in part by the National Swedish Board for Technical Development, and partly by the National Science Foundation (DMR86-15641). | |||||||||
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| Issue or Number: | 2-4 | |||||||||
| DOI: | 10.1080/10420158908230309 | |||||||||
| Record Number: | CaltechAUTHORS:20141104-101347699 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20141104-101347699 | |||||||||
| Official Citation: | Ingemarsson, P. A., Hedin, A., Sundqvist, B. U. R., Tombrello, T. A., & Johnson, R. E. (1989). Electronic effects in MeV ion tracks affecting thin film adhesion. Radiation Effects and Defects in Solids, 108(2-4), 205-209. doi: 10.1080/10420158908230309 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 51222 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | INVALID USER | |||||||||
| Deposited On: | 04 Nov 2014 21:46 | |||||||||
| Last Modified: | 10 Nov 2021 19:07 |
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