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Ion-beam-enhanced adhesion in the electronic stopping region

Griffith, J. E. and Qiu, Yuanxum and Tombrello, T. A. (1982) Ion-beam-enhanced adhesion in the electronic stopping region. Nuclear Instruments and Methods, 198 (2-3). pp. 607-609. ISSN 0029-554X. doi:10.1016/0167-5087(82)90308-8.

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We report here the first use of ion beams in the electronic stopping region to improve the adhesion of insulators to other materials. In particular, we have dramatically improved the bonding of Au films to teflon, ferrite, and SiO_2 by bombarding them with He and Cl, respectively. Improvements in bonding have also been observed for Au on glass, Au and Cu on sapphire, and Si_3N_4 on Si. The mechanism is apparently associated with sputtering and track-forming processes occuring in the electronic stopping region. Numerous applications are discussed.

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Additional Information:© 1982 North-Holland Publishing Company. Received 22 December 1981. Supported in part by the National Aeronautics and Space Administration [NGR 05-002-333, NAGW-148] and the National Science Foundation [PHY79-23638]. We thank H.J. Leamy, D. Goodstein, B. Landel, J. Moacanin, and S.K. Khanna for helpful discussions. I. Suni and M. Batur kindly made the Si_3N_4 samples, and P.Y. Hu generously provided the ferrite. M. Mendenhall, R. Miles and N. Wingreen gave valuable assistance in the lab.
Funding AgencyGrant Number
NASANGR 05-002-333
Issue or Number:2-3
Record Number:CaltechAUTHORS:20141104-101855485
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Official Citation:J.E. Griffith, Yuanxum Qiu, T.A. Tombrello, Ion-beam-enhanced adhesion in the electronic stopping region, Nuclear Instruments and Methods in Physics Research, Volume 198, Issues 2–3, 15 July 1982, Pages 607-609, ISSN 0167-5087, (
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:51224
Deposited By: Tony Diaz
Deposited On:04 Nov 2014 22:09
Last Modified:10 Nov 2021 19:07

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