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Modification of Electronic Materials with MeV Ions

Tombrello, T. A. (1989) Modification of Electronic Materials with MeV Ions. Journal de Physique Colloques, 50 (C-2). pp. 1-7. ISSN 0449-1947. doi:10.1051/jphyscol:1989201.

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MeV ion beams often allow unique opportunities for the modification of the electronic properties of materials. In this talk I shall discuss three such examples from our recent work. The first is the production of deeply buried SiO2 layers formed in Si by MeV oxygen implantation for a variety of implantation and annealing conditions. The resulting material has been characterized by XTEM. The second involves the modification of InP by N implantation and GaAs by O implantation. In these cases we have used XTEM, x-ray rocking curve analysis, ion channeling, and nuclear reaction profiling to study the structural damage and its behavior under thermal annealing. The third example shows how the resistivity of thin amorphous carbon films can be changed over a range of 10^4 by MeV ion bombardment. The mechanism for this phenomenon is shown to be closely related to that proposed for MeV ion induced desorption.

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Additional Information:© 1989 Société Française de Physique. Supported in part by the National Science Foundation (DMR84-21119 and DMR86-15641).
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Issue or Number:C-2
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Official Citation:MODIFICATION OF ELECTRONIC MATERIALS WITH MeV IONS T. A. TOMBRELLO J. Phys. Colloques 50 (C2) C2-1-C2-7 (1989) DOI: 10.1051/jphyscol:1989201
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:51228
Deposited By: Tony Diaz
Deposited On:04 Nov 2014 22:04
Last Modified:10 Nov 2021 19:07

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