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Formation of buried high-resistivity layers in InP crystals by MeV nitrogen ion implantation

Xiong, Fulin and Tombrello, T. A. and Chen, T. R. and Wang, H. and Zhuang, Y. H. and Yariv, A. (1989) Formation of buried high-resistivity layers in InP crystals by MeV nitrogen ion implantation. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 39 (1-4). pp. 487-491. ISSN 0168-583X. https://resolver.caltech.edu/CaltechAUTHORS:20141104-134526228

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Abstract

We have studied the formation of buried high-resistivity layers in InP single crystals by MeV ion implantation. It was found that the implantation of MeV nitrogen ions plus subsequent thermal annealing can generate a deep burried layer with resistivity up to about 10^6 Ω cm in n-type InP crystals. This layer has exhibited implant dose dependence, high thermal stability and reproducibility over a dose range of 5 × 10^(14) − 1 × 10^(16) cm^(−2). The mechanism of insulating layer generation by implantation, based on cross sectional transmission electron microscopy (XTEM) and I–V curve measurements, as well as the application of this technique in device fabrication, will be discussed.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1016/0168-583X(89)90832-XDOIArticle
Additional Information:© 1989 Published by Elsevier B.V. Available online 28 October 2002. Supported in part by the National Science Foundation (DMR86-15641) and the Office of Navy Research (Contract N00014-85-K-0032). Special thanks are due to Dr. C. W. Nieh for his assistance with the XTEM work and to Prof. H. Morkoç in University of Illinois at Urbana-Champaign for many valuable discussion. Acknowledgements are also due to the Department of Applied Physics, California Institute of Technology for the financial support to one of the authors (F.X.) for the international travel to the IBMM'88 conference to present this paper.
Funders:
Funding AgencyGrant Number
NSFDMR86-15641
Office of Naval Research (ONR)N00014-85-K-0032
Caltech Department of Applied PhysicsUNSPECIFIED
Issue or Number:1-4
Record Number:CaltechAUTHORS:20141104-134526228
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20141104-134526228
Official Citation:Fulin Xiong, T.A. Tombrello, T.R. Chen, H. Wang, Y.H. Zhuang, A. Yariv, Formation of buried high-resistivity layers in InP crystals by MeV nitrogen ion implantation, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Volume 39, Issues 1–4, 2 March 1989, Pages 487-491, ISSN 0168-583X, http://dx.doi.org/10.1016/0168-583X(89)90832-X. (http://www.sciencedirect.com/science/article/pii/0168583X8990832X)
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:51240
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:04 Nov 2014 22:06
Last Modified:02 Jun 2020 17:06

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