CaltechAUTHORS
  A Caltech Library Service

Direct-bonded GaAs/InGaAs tandem solar cell

Tanabe, Katsuaki and Fontcuberta i Morral, Anna and Atwater, Harry A. and Aiken, Daniel J. and Wanlass, Mark W. (2006) Direct-bonded GaAs/InGaAs tandem solar cell. Applied Physics Letters, 89 (10). Art. No. 102106. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:TANapl06

[img]
Preview
PDF - Published Version
See Usage Policy.

81Kb

Use this Persistent URL to link to this item: https://resolver.caltech.edu/CaltechAUTHORS:TANapl06

Abstract

A direct-bonded GaAs/InGaAs solar cell is demonstrated. The direct-bonded interconnect between subcells of this two-junction cell enables monolithic interconnection without threading dislocations and planar defects that typically arise during lattice-mismatched epitaxial heterostructure growth. The bonded interface is a metal-free n+GaAs/n+InP tunnel junction. The tandem cell open-circuit voltage is approximately the sum of the subcell open-circuit voltages. The internal quantum efficiency is 0.8 for the GaAs subcell compared to 0.9 for an unbonded GaAs subcell near the band gap energy and is 0.7 for both of the InGaAs subcell and an unbonded InGaAs subcell, with bonded and unbonded subcells similar in spectral response.


Item Type:Article
Related URLs:
URLURL TypeDescription
https://doi.org/10.1063/1.2347280DOIUNSPECIFIED
ORCID:
AuthorORCID
Fontcuberta i Morral, Anna0000-0002-5070-2196
Atwater, Harry A.0000-0001-9435-0201
Additional Information:© 2006 American Institute of Physics (Received 19 March 2006; accepted 26 July 2006; published online 6 September 2006) The authors acknowledge Robert Reedy of the National Renewable Energy Laboratory for expert assistance with SIMS measurements. This work was supported by NASA and the National Renewable Energy Laboratory. Alireza Ghaffari, Robert Walters of the California Institute of Technology, and James Zahler of the Aonex Technologies are acknowledged for their technical support in development of the bonding process and the electrical measurements. One of the authors (K.T.) was supported in part by the Japanese ITO Scholarship for International Education Exchange.
Funders:
Funding AgencyGrant Number
NASAUNSPECIFIED
National Renewable Energy LaboratoryUNSPECIFIED
Ito Foundation For International Education ExchangeUNSPECIFIED
Subject Keywords:indium compounds; gallium arsenide; III-V semiconductors; solar cells; integrated circuit bonding; integrated circuit interconnections; semiconductor junctions; energy gap
Issue or Number:10
Record Number:CaltechAUTHORS:TANapl06
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:TANapl06
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:5127
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:02 Oct 2006
Last Modified:02 Oct 2019 23:19

Repository Staff Only: item control page