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Solid-state metathesis reactions under pressure: A rapid route to crystalline gallium nitride

Wallace, Charles H. and Kim, Sang-Ho and Rose, Garry A. and Rao, Lin and Heath, James R. and Nicol, Malcolm and Kaner, Richard B. (1998) Solid-state metathesis reactions under pressure: A rapid route to crystalline gallium nitride. Applied Physics Letters, 72 (5). pp. 596-598. ISSN 0003-6951. doi:10.1063/1.120818.

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High pressure chemistry has traditionally involved applying pressure and increasing temperature until conditions become thermodynamically favorable for phase transitions or reactions to occur. Here, high pressure alone is used as a starting point for carrying out rapid, self-propagating metathesis reactions. By initiating chemical reactions under pressure, crystalline phases, such as gallium nitride, can be synthesized which are inaccessible when initiated from ambient conditions. The single-phase gallium nitride made by metathesis reactions under pressure displays significant photoluminescence intensity in the blue/ultraviolet region. The absence of size or surface-state effects in the photoluminescence spectra show that the crystallites are of micron dimensions. The narrow lines of the x-ray diffraction patterns and scanning electron microscopy confirm this conclusion. Brightly luminescent thin films can be readily grown using pulsed laser deposition.

Item Type:Article
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Heath, James R.0000-0001-5356-4385
Additional Information:© 1998 American Institute of Physics. Received 20 October 1997; accepted 7 December 1997. This work was supported by the National Science Foundation, the University of California Campus Laboratory Collaboration Program (M.N., R.B.K.), along with Guggenheim (R.B.K.), Packard, and Sloan (J.R.H., R.B.K.) Fellowships.
Funding AgencyGrant Number
John Simon Guggenheim FoundationUNSPECIFIED
David and Lucile Packard FoundationUNSPECIFIED
Alfred P. Sloan FoundationUNSPECIFIED
Subject Keywords:gallium compounds; III-V semiconductors; wide band gap semiconductors; semiconductor growth; crystal growth; high-pressure effects
Issue or Number:5
Record Number:CaltechAUTHORS:WALapl98
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:5129
Deposited By: Tony Diaz
Deposited On:03 Oct 2006
Last Modified:08 Nov 2021 20:22

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