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A Compact Transregional Model for Digital CMOS Circuits Operating Near Threshold

Keller, Sean and Harris, David Money and Martin, Alain J. (2014) A Compact Transregional Model for Digital CMOS Circuits Operating Near Threshold. IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 22 (10). pp. 2041-2053. ISSN 1063-8210. doi:10.1109/TVLSI.2013.2282316.

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Power dissipation is currently one of the most important design constraints in digital systems. In order to reduce power and energy demands in the foremost technology, namely CMOS, it is necessary to reduce the supply voltage to near the device threshold voltage. Existing analytical models for MOS devices are either too complex, thus obscuring the basic physical relations between voltages and currents, or they are inaccurate and discontinuous around the region of interest, i.e., near threshold. This paper presents a simple transregional compact model for analyzing digital circuits around the threshold voltage. The model is continuous, physically derived (by way of a simplified inversion-charge approximation), and accurate over a wide operational range: from a few times the thermal voltage to approximately twice the threshold voltage in modern technologies.

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Additional Information:© 2013 IEEE. Manuscript received November 29, 2012; revised May 28, 2013; accepted August 20, 2013. Date of publication November 1, 2013; date of current version September 23, 2014. This work was supported by the National Science Foundation. The authors would like to thank S. S. Bhargav, C. Moore, and X. Chang for their excellent comments and helpful discussions.
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Subject Keywords:Circuit simulation, digital circuits, EKV, integrated circuit modeling, low-power electronics, minimum-energy point, near-threshold CMOS, subthreshold CMOS
Issue or Number:10
Record Number:CaltechAUTHORS:20141106-133106801
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Official Citation:Keller, S.; Harris, D.M.; Martin, A.J., "A Compact Transregional Model for Digital CMOS Circuits Operating Near Threshold," Very Large Scale Integration (VLSI) Systems, IEEE Transactions on , vol.22, no.10, pp.2041,2053, Oct. 2014 doi: 10.1109/TVLSI.2013.2282316 URL:
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:51380
Deposited By: Tony Diaz
Deposited On:06 Nov 2014 21:36
Last Modified:10 Nov 2021 19:10

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