CaltechAUTHORS
  A Caltech Library Service

Effects of Parylene Coating on Electron Transport in Pristine Suspended Carbon Nanotube Field-Effect-Transistors

Wang, Max L. and Chen, Jihan and Amer, Moh and Cronin, Stephen and Bushmaker, Adam (2014) Effects of Parylene Coating on Electron Transport in Pristine Suspended Carbon Nanotube Field-Effect-Transistors. IEEE Transactions on Electron Devices, 61 (10). pp. 3539-3545. ISSN 0018-9383. http://resolver.caltech.edu/CaltechAUTHORS:20141107-103113604

Full text is not posted in this repository. Consult Related URLs below.

Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:20141107-103113604

Abstract

Carbon nanotube (CNT) field effect transistors (FETs) are anticipated to provide a viable alternative to silicon as CMOS technology begins to reach ultimate scaling lengths. With high carrier mobilities, current density, and tunable bandgaps, CNTs can allow for the growth of the transistor industry beyond traditional materials. However, these nanotubes are sensitive to their surroundings and require a protective passivation layer to isolate them from contamination by their external environment. Thin parylene films have been shown to be a practical passivation layer for CNT devices as a flexible, chemically inert, high dielectric strength, pinhole-free material. In this paper, we perform electrical characterization of single suspended CNT FETs before and after passivation with parylene-C thin-film deposition. Analysis shows moderate changes in the threshold voltage, subthreshold slope, and ON/OFF ratio with parylene passivation, indicating minimal effect on the CNT FET overall performance.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1109/TED.2014.2352652 DOIArticle
http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6902855PublisherArticle
Additional Information:© 2014 IEEE. Manuscript received April 28, 2014; revised June 23, 2014; accepted July 28, 2014. Date of current version September 18, 2014. This work was supported in part by the Independent Research and Development Program, Aerospace Corporation, El Segundo, CA, USA, in part by the University of California at Santa Barbara, Nanofabrication Facility, Santa Barbara, CA, USA, and in part by the National Science Foundation through the National Nanotechnology Infrastructure Network. The review of this paper was arranged by Editor R. K. Lake. The authors would like to thank J. Childs for assistance with the parylene deposition process.
Funders:
Funding AgencyGrant Number
Aerospace CorporationUNSPECIFIED
University of California, Santa BarbaraUNSPECIFIED
NSFUNSPECIFIED
Subject Keywords:Carbon nanotube (CNT); coatings; flexible electronics; interface phenomena; parylene; passivation; statistical analysis; transistors
Record Number:CaltechAUTHORS:20141107-103113604
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20141107-103113604
Official Citation:Wang, M.L.; Jihan Chen; Amer, M.; Cronin, S.; Bushmaker, A., "Effects of Parylene Coating on Electron Transport in Pristine Suspended Carbon Nanotube Field-Effect-Transistors," Electron Devices, IEEE Transactions on , vol.61, no.10, pp.3539,3545, Oct. 2014 doi: 10.1109/TED.2014.2352652 URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6902855&isnumber=6902839
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:51429
Collection:CaltechAUTHORS
Deposited By: Tony Diaz
Deposited On:07 Nov 2014 18:42
Last Modified:07 Nov 2014 18:42

Repository Staff Only: item control page