Koren, U. and Yu, K. L. and Chen, T. R. and Bar-Chaim, N. and Margalit, S. and Yariv, A. (1982) Monolithic integration of a very low threshold GaInAsP laser and metal-insulator-semiconductor field-effect transistor on semi-insulating InP. Applied Physics Letters, 40 (8). pp. 643-645. ISSN 0003-6951. doi:10.1063/1.93226. https://resolver.caltech.edu/CaltechAUTHORS:KORapl82a
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Abstract
Monolithic integration of 1.3-µm groove lasers and metal-insulator-semiconductor field-effect transistors (MISFET) is achieved by a simple single liquid phase epitaxy (LPE) growth process. Laser thresholds as low as 14 mA for 300-µm cavity length are obtained. MIS depletion mode FET's with n channels on LPE grown InP layer show typical transconductance of 5–10 mmho. Laser modulation by the FET current is demonstrated at up to twice the threshold current.
| Item Type: | Article | ||||||
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| Additional Information: | Copyright © 1982 American Institute of Physics Received 21 December 1981; accepted for publication 19 January 1982 This work is supported by the Office of Naval Research and the National Science Foundation (Optical Communication Program). | ||||||
| Subject Keywords: | INTEGRATED CIRCUITS; SEMICONDUCTOR LASERS; FIELD–EFFECT TRANSISTORS; METALS; ELECTRICAL INSULATORS; SEMICONDUCTOR MATERIALS; INDIUM PHOSPHIDES; GALLIUM ARSENIDES; INDIUM ARSENIDES; GALLIUM PHOSPHIDES; CONFIGURATION; LIQUIDS; EPITAXY; LASER CAVITIES; LENGTH; MODULATION | ||||||
| Issue or Number: | 8 | ||||||
| DOI: | 10.1063/1.93226 | ||||||
| Record Number: | CaltechAUTHORS:KORapl82a | ||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:KORapl82a | ||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
| ID Code: | 5177 | ||||||
| Collection: | CaltechAUTHORS | ||||||
| Deposited By: | Archive Administrator | ||||||
| Deposited On: | 04 Oct 2006 | ||||||
| Last Modified: | 08 Nov 2021 20:23 |
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