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Monolithic integration of a very low threshold GaInAsP laser and metal-insulator-semiconductor field-effect transistor on semi-insulating InP

Koren, U. and Yu, K. L. and Chen, T. R. and Bar-Chaim, N. and Margalit, S. and Yariv, A. (1982) Monolithic integration of a very low threshold GaInAsP laser and metal-insulator-semiconductor field-effect transistor on semi-insulating InP. Applied Physics Letters, 40 (8). pp. 643-645. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:KORapl82a

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Abstract

Monolithic integration of 1.3-µm groove lasers and metal-insulator-semiconductor field-effect transistors (MISFET) is achieved by a simple single liquid phase epitaxy (LPE) growth process. Laser thresholds as low as 14 mA for 300-µm cavity length are obtained. MIS depletion mode FET's with n channels on LPE grown InP layer show typical transconductance of 5–10 mmho. Laser modulation by the FET current is demonstrated at up to twice the threshold current.


Item Type:Article
Additional Information:Copyright © 1982 American Institute of Physics Received 21 December 1981; accepted for publication 19 January 1982 This work is supported by the Office of Naval Research and the National Science Foundation (Optical Communication Program).
Subject Keywords:INTEGRATED CIRCUITS; SEMICONDUCTOR LASERS; FIELD–EFFECT TRANSISTORS; METALS; ELECTRICAL INSULATORS; SEMICONDUCTOR MATERIALS; INDIUM PHOSPHIDES; GALLIUM ARSENIDES; INDIUM ARSENIDES; GALLIUM PHOSPHIDES; CONFIGURATION; LIQUIDS; EPITAXY; LASER CAVITIES; LENGTH; MODULATION
Issue or Number:8
Record Number:CaltechAUTHORS:KORapl82a
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:KORapl82a
Alternative URL:http://dx.doi.org/10.1063/1.93226
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:5177
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:04 Oct 2006
Last Modified:26 Dec 2012 09:04

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