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Low threshold InGaAsP/InP lasers with microcleaved mirrors suitable for monolithic integration

Koren, U. and Hasson, A. and Yu, K. L. and Chen, T. R. and Margalit, S. and Yariv, A. (1982) Low threshold InGaAsP/InP lasers with microcleaved mirrors suitable for monolithic integration. Applied Physics Letters, 41 (9). pp. 791-793. ISSN 0003-6951. doi:10.1063/1.93705.

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Low threshold InGaAsP/InP injection lasers on semi-insulating InP substrates have been developed with mirrors fabricated by the microcleavage technique. Miniature suspended bridges containing the laser channels have been formed and then microcleavage has been accomplished by the use of ultrasonic vibrations. Lasers with current thresholds as low as 18 mA with 140-µm cavity length and with 35–45% differential quantum efficiency have been obtained.

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Additional Information:Copyright © 1982 American Institute of Physics Received 1 July 1982; accepted for publication 24 August 1982 This research was supported by the Office of Naval Research and by the Air Force Office of Scientific Research.
Subject Keywords:semiconductor lasers; mirrors; cleavage; integrated circuits; indium arsenides; gallium arsenides; indium phosphides; gallium phosphides; experimental data; ultrasonic waves; mechanical vibrations; threshold current; laser cavities; quantum efficiency
Issue or Number:9
Record Number:CaltechAUTHORS:KORapl82b
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:5178
Deposited By: Archive Administrator
Deposited On:04 Oct 2006
Last Modified:08 Nov 2021 20:23

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