Duwez, Pol and Willens, R. H. and Crewdson, R. C. (1965) Amorphous Phase in Palladium—Silicon Alloys. Journal of Applied Physics, 36 (7). pp. 2267-2269. ISSN 0021-8979. doi:10.1063/1.1714461. https://resolver.caltech.edu/CaltechAUTHORS:DUWjap65
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Abstract
By rapid cooling from the melt, an amorphous phase has been obtained in palladium—silicon alloys containing 15 to 23 at.% Si. This phase is stable at room temperature and crystallization cannot be detected after one month at 250°C. With rates of heating greater than 20°C/min, rapid crystallization takes place at 400°C, with a heat release of approximately 1000 cal/mole. The electrical resistivity of an alloy containing 17 at.% Si at room temperature is 2.6 times that of the equilibrium alloy. The resistivity decreases linearly with decreasing temperature and is about 95% of the room-temperature value at 2°K. Various factors involved in the retention of amorphous phases in rapidly quenched liquid alloys are discussed.
| Item Type: | Article | ||||||
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| Additional Information: | ©1965 The American Institute of Physics (Received 5 January 1965) Work supported by the U.S. Atomic Energy Commission. | ||||||
| Issue or Number: | 7 | ||||||
| DOI: | 10.1063/1.1714461 | ||||||
| Record Number: | CaltechAUTHORS:DUWjap65 | ||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:DUWjap65 | ||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
| ID Code: | 5240 | ||||||
| Collection: | CaltechAUTHORS | ||||||
| Deposited By: | Archive Administrator | ||||||
| Deposited On: | 05 Oct 2006 | ||||||
| Last Modified: | 08 Nov 2021 20:23 |
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