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Amorphous Phase in Palladium—Silicon Alloys

Duwez, Pol and Willens, R. H. and Crewdson, R. C. (1965) Amorphous Phase in Palladium—Silicon Alloys. Journal of Applied Physics, 36 (7). pp. 2267-2269. ISSN 0021-8979. doi:10.1063/1.1714461.

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By rapid cooling from the melt, an amorphous phase has been obtained in palladium—silicon alloys containing 15 to 23 at.% Si. This phase is stable at room temperature and crystallization cannot be detected after one month at 250°C. With rates of heating greater than 20°C/min, rapid crystallization takes place at 400°C, with a heat release of approximately 1000 cal/mole. The electrical resistivity of an alloy containing 17 at.% Si at room temperature is 2.6 times that of the equilibrium alloy. The resistivity decreases linearly with decreasing temperature and is about 95% of the room-temperature value at 2°K. Various factors involved in the retention of amorphous phases in rapidly quenched liquid alloys are discussed.

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Additional Information:©1965 The American Institute of Physics (Received 5 January 1965) Work supported by the U.S. Atomic Energy Commission.
Issue or Number:7
Record Number:CaltechAUTHORS:DUWjap65
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:5240
Deposited By: Archive Administrator
Deposited On:05 Oct 2006
Last Modified:08 Nov 2021 20:23

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