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Rate Constants for Charge Transfer Across Semiconductor-Liquid Interfaces

Farjardo, Arnel M. and Lewis, Nathan S. (1996) Rate Constants for Charge Transfer Across Semiconductor-Liquid Interfaces. Science, 274 (5289). pp. 969-972. ISSN 0036-8075. doi:10.1126/science.274.5289.969.

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Interfacial charge-transfer rate constants have been measured for n-type Si electrodes in contact with a series of viologen-based redox couples in methanol through analyses of the behavior of these junctions with respect to their current density versus potential and differential capacitance versus potential properties. The data allow evaluation of the maximum rate constant (and therefore the electronic coupling) for majority carriers in the solid as well as of the dependence of the rate constant on the driving force for transfer of delocalized electrons from the n-Si semiconducting electrode into the localized molecular redox species in the solution phase. The data are in good agreement with existing models of this interfacial electron transfer process and provide insight into the fundamental kinetic events underlying the use of semiconducting photoelectrodes in applications such as solar energy conversion.

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Lewis, Nathan S.0000-0001-5245-0538
Additional Information:© 1996 American Association for the Advancement of Science. Received 25 June 1996; accepted 13 September 1996. Supported by NSF grant CHE-9634152.
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Issue or Number:5289
Record Number:CaltechAUTHORS:20141208-130032900
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Official Citation:Rate Constants for Charge Transfer Across Semiconductor-Liquid Interfaces Arnel M. Fajardo and Nathan S. Lewis Science 8 November 1996: 274 (5289), 969-972. [DOI:10.1126/science.274.5289.969]
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:52472
Deposited By: Tony Diaz
Deposited On:09 Dec 2014 21:33
Last Modified:20 Apr 2023 20:35

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