Best, J. S. and McCaldin, J. O. and McGill, T. C. and Mead, C. A. and Mooney, J. B. (1976) HgSe, a highly electronegative stable metallic contact for semiconductor devices. Applied Physics Letters, 29 (7). pp. 433-434. ISSN 0003-6951. doi:10.1063/1.89109. https://resolver.caltech.edu/CaltechAUTHORS:BESapl76
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Abstract
Schottky barriers formed by the highly electronegative substance HgSe on n-ZnS and on n-ZnSe have been characterized by capacitance-voltage and photoresponse measurements. The barriers are about 0.5 eV greater than Au barriers on these n-type substrates. HgSe contacts are stable under ambient conditions and are easily fabricated, making them attractive for device use.
| Item Type: | Article | ||||||
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| Additional Information: | Copyright © 1976 American Institute of Physics Received 17 June 1976 | ||||||
| Issue or Number: | 7 | ||||||
| DOI: | 10.1063/1.89109 | ||||||
| Record Number: | CaltechAUTHORS:BESapl76 | ||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:BESapl76 | ||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
| ID Code: | 5272 | ||||||
| Collection: | CaltechAUTHORS | ||||||
| Deposited By: | Archive Administrator | ||||||
| Deposited On: | 06 Oct 2006 | ||||||
| Last Modified: | 08 Nov 2021 20:24 |
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