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HgSe, a highly electronegative stable metallic contact for semiconductor devices

Best, J. S. and McCaldin, J. O. and McGill, T. C. and Mead, C. A. and Mooney, J. B. (1976) HgSe, a highly electronegative stable metallic contact for semiconductor devices. Applied Physics Letters, 29 (7). pp. 433-434. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:BESapl76

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Abstract

Schottky barriers formed by the highly electronegative substance HgSe on n-ZnS and on n-ZnSe have been characterized by capacitance-voltage and photoresponse measurements. The barriers are about 0.5 eV greater than Au barriers on these n-type substrates. HgSe contacts are stable under ambient conditions and are easily fabricated, making them attractive for device use.


Item Type:Article
Related URLs:
URLURL TypeDescription
https://doi.org/10.1063/1.89109["eprint_fieldopt_related_url_type_DOI" not defined]UNSPECIFIED
Additional Information:Copyright © 1976 American Institute of Physics Received 17 June 1976
Issue or Number:7
Record Number:CaltechAUTHORS:BESapl76
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:BESapl76
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:5272
Collection:CaltechAUTHORS
Deposited By: Archive Administrator
Deposited On:06 Oct 2006
Last Modified:02 Oct 2019 23:21

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