Nakamura, M. and Aiki, K. and Umeda, Jun-ichi and Yariv, A. and Yen, H. W. and Morikawa, T. (1974) GaAs[Single Bond]Ga1–xAlxAs double-heterostructure distributed-feedback diode lasers. Applied Physics Letters, 25 (9). pp. 487-488. ISSN 0003-6951. doi:10.1063/1.1655559. https://resolver.caltech.edu/CaltechAUTHORS:NAKapl74b
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Abstract
We report laser oscillation at 80–100°K in electrically pumped GaAs[Single Bond]Ga1–xAlxAs double-heterostructure distributed-feedback diode lasers. The feedback for laser oscillation was provided by a corrugated interface between the active GaAs layer and the p-Ga1–xAlxAs layer. The lowest threshold current density was 2.5 kA/cm^2 in pulsed operation. The wavelength of laser emission was 8112 Å at 82°K with a half-width of less than 0.3 Å. The temperature dependence of the laser wavelength was found to be smaller than that of the conventional Fabry-Perot laser.
| Item Type: | Article | ||||||
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| Additional Information: | ©1974 American Institute of Physics (Received 8 July 1974) The authors would like to thank Dr. Y. Ohtomo and Dr. O. Nakada of Central Research Laboratory, Hitachi, Ltd., for their continuous encouragement; Y. Sasaki of the same laboratory for his help in fabricating the diodes; and A. Gover of California Institute of Technology for his helpful discussions. | ||||||
| Issue or Number: | 9 | ||||||
| DOI: | 10.1063/1.1655559 | ||||||
| Record Number: | CaltechAUTHORS:NAKapl74b | ||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:NAKapl74b | ||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | ||||||
| ID Code: | 5278 | ||||||
| Collection: | CaltechAUTHORS | ||||||
| Deposited By: | Archive Administrator | ||||||
| Deposited On: | 09 Oct 2006 | ||||||
| Last Modified: | 08 Nov 2021 20:24 |
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