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GaAs[Single Bond]Ga1–xAlxAs double-heterostructure distributed-feedback diode lasers

Nakamura, M. and Aiki, K. and Umeda, Jun-ichi and Yariv, A. and Yen, H. W. and Morikawa, T. (1974) GaAs[Single Bond]Ga1–xAlxAs double-heterostructure distributed-feedback diode lasers. Applied Physics Letters, 25 (9). pp. 487-488. ISSN 0003-6951. doi:10.1063/1.1655559.

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We report laser oscillation at 80–100°K in electrically pumped GaAs[Single Bond]Ga1–xAlxAs double-heterostructure distributed-feedback diode lasers. The feedback for laser oscillation was provided by a corrugated interface between the active GaAs layer and the p-Ga1–xAlxAs layer. The lowest threshold current density was 2.5 kA/cm^2 in pulsed operation. The wavelength of laser emission was 8112 Å at 82°K with a half-width of less than 0.3 Å. The temperature dependence of the laser wavelength was found to be smaller than that of the conventional Fabry-Perot laser.

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Additional Information:©1974 American Institute of Physics (Received 8 July 1974) The authors would like to thank Dr. Y. Ohtomo and Dr. O. Nakada of Central Research Laboratory, Hitachi, Ltd., for their continuous encouragement; Y. Sasaki of the same laboratory for his help in fabricating the diodes; and A. Gover of California Institute of Technology for his helpful discussions.
Issue or Number:9
Record Number:CaltechAUTHORS:NAKapl74b
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:5278
Deposited By: Archive Administrator
Deposited On:09 Oct 2006
Last Modified:08 Nov 2021 20:24

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