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GaAs GaAlAs double-heterostructure injection lasers with distributed feedback

Nakamura, Michiharu and Aiki, K. and Umeda, J. and Katzir, A. and Yariv, A. and Yen, H. W. (1975) GaAs GaAlAs double-heterostructure injection lasers with distributed feedback. IEEE Journal of Quantum Electronics, 11 (7, pt.). pp. 436-439. ISSN 0018-9197.

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GaAs-GaAlAs double-heterostructure distributed-feedback injection lasers are investigated at temperatures between 80 and 150 K under pulsed operation. The optical feedback for laser oscillation is provided by a corrugated interface between the p-GaAs active layer and the p-GaAlAs layer. The corrugation is made by two methods, ion milling and chemical etching, and the latter method is found to give the lower threshold. The laser oscillation occurs in a single longitudinal mode, whose wavelength is stable against the change of the excitation level. The temperature dependence of the wavelength of the distributed-feedback laser is shown to be 0.5 Å/deg, which is about 1/3 to 1/4 that of the conventional Fabry-Perot (FP) laser.

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Additional Information:© Copyright 1975 IEEE. Reprinted with permission. Manuscript received December 5, 1974; revised February 27, 1975. The work of A. Katzir and A. Yariv was supported by the Office of Naval Research and by the Advanced Projects Research Agency through the Naval Electronics Laboratory Center. The authors wish to thank Dr. Y. Otomo and Dr. O. Nakada of the Central Research Laboratory, Hitachi Ltd., for their support of this work. They also wish to thank S. Yamashita for his assistance in the experiment.
Issue or Number:7, pt.
Record Number:CaltechAUTHORS:NAKieeejqe75
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:5281
Deposited By: Archive Administrator
Deposited On:09 Oct 2006
Last Modified:02 Oct 2019 23:21

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