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The Presence of Deep Levels in Ion Implanted Junctions

Hunsperger, R. G. and Marsh, O. J. and Mead, C. A. (1968) The Presence of Deep Levels in Ion Implanted Junctions. Applied Physics Letters, 13 (9). pp. 295-297. ISSN 0003-6951. doi:10.1063/1.1652619.

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It has been found that ion implantation doping results in the generation and diffusion of defect species, forming deep trapping levels. The effect of these levels on the electrical characteristics of zinc‐implanted GaAs diodes has been observed for the case of 70‐kV implantation at 400°C into substrates with n‐type concentrations ranging from 1 × 10^16 to 1.8 × 10^18 atoms/cm^3. Capacitance‐voltage measurements have indicated the presence of a semi‐insulating layer in the diodes, varying in thickness from 0.18 μ for the most heavily doped substrate to 2.7 μ for the lightest. Frequency dependence of the junction capacitance and power law variation of forward current vs voltage have also been observed and are attributed to deep levels.

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Additional Information:© 1968 The American Institute of Physics. Received 31 July 1968; in final form 24 September 1968. This work was supported in part by NASA-ERC, Cambridge, Mass.
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Issue or Number:9
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Deposited On:18 Dec 2014 00:45
Last Modified:10 Nov 2021 19:44

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