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Ti and V layers retard interaction between Al films and polycrystalline Si

Nakamura, K. and Lau, S. S. and Nicolet, M-A. and Mayer, J. W. (1976) Ti and V layers retard interaction between Al films and polycrystalline Si. Applied Physics Letters, 28 (5). pp. 277-280. ISSN 0003-6951. doi:10.1063/1.88734.

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Fine-grained polycrystalline Si (poly Si) in contact with Al films recrystallizes at temperatures well below the Si-Al eutectic (577 °C). We show that this interaction can be deferred or suppressed by placing a buffer layer of Ti or V between the Al film and the poly Si. During annealing, Ti or V form TiAl3 or Val3 at the buffer-layer–Al-film interface, but do not react with the poly Si so that the integrity of the poly Si is preserved as long as some unreacted Ti or V remains. The reaction between the Ti or V layer and the Al film is transport limited ([proportional]t^1/2) and characterized by the diffusion constants 1.5×10^15 exp(–1.8eV/kT) Å^2/sec or 8.4×10^12 exp(–1.7eV/kT) Å^2/sec, respectively.

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Additional Information:Copyright © 1976 American Institute of Physics Received 16 October 1975 The authors wish to thank Dr. M. Kamoshida of Nippon Electric Co., Ltd., for his encouragement. They also thank W. P. Fleming of Hughes Research Labs. for the electron microprobe analysis. Work supported, in part, by the National Science Foudnation (T. Mukherjee) and the Air Force Cambridge Research Laboratories (D. E. Davies).
Issue or Number:5
Record Number:CaltechAUTHORS:NAKapl76
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ID Code:5286
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Deposited On:09 Oct 2006
Last Modified:08 Nov 2021 20:24

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