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Laser oscillation in epitaxial GaAs waveguides with corrugation feedback

Nakamura, M. and Yen, H. W. and Yariv, A. and Garmire, E. and Somekh, S. and Garvin, H. L. (1973) Laser oscillation in epitaxial GaAs waveguides with corrugation feedback. Applied Physics Letters, 23 (5). pp. 224-225. ISSN 0003-6951. doi:10.1063/1.1654867.

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Laser action was observed in GaAs epitaxial films using corrugation feedback. The output wavelength was found to depend on the corrugation period. The loss, threshold gain, and feedback parameters were determined and compared with theoretical predictions.

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Additional Information:©1973 American Institute of Physics (Received 4 May 1973) The authors acknowledge gratefully the help of Dr. W. C. Holton of Texas Instruments, of Dr. M. Migitaka of Hitachi Central Research Laboratories hwo supplied the GaAs-GaAs epilayers, of D. Armstrong who helped grow the GaAs-GaAlAs layers, and Dr. R. S. Hughes of the Naval Weapons Center fo the loan of the dye laser. Research supported by the Army Research Projects Agency (monitored by the Army Research Office - Durham), and by the Office of Naval Research.
Issue or Number:5
Record Number:CaltechAUTHORS:NAKapl73b
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:5289
Deposited By: Archive Administrator
Deposited On:09 Oct 2006
Last Modified:08 Nov 2021 20:24

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