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Photothresholds in Mg_2Ge

Mead, C. A. (1964) Photothresholds in Mg_2Ge. Journal of Applied Physics, 35 (8). pp. 2460-2462. ISSN 0021-8979. doi:10.1063/1.1702881. https://resolver.caltech.edu/CaltechAUTHORS:20141216-154119053

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Abstract

Optical absorption and surface barrier photoresponse measurements have been made on cleaved samples of Mg_2Ge. The form of the results obtained from both techniques indicates an indirect transition at approximately 0.54 eV followed by a direct transition at approximately 1.8 eV.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1063/1.1702881DOIArticle
http://scitation.aip.org/content/aip/journal/jap/35/8/10.1063/1.1702881PublisherArticle
Alternate Title:Photothresholds in Mg2Ge
Additional Information:© 1964 The American Institute of Physics. Received 1 April 1964. The author would like to thank H. Kroemer for supplying the samples of Mg_2Ge, W. G. Spitzer for helpful discussions, and H. M. Simpson for the fabrication of the samples. The work was supported in part by the Office of Naval Research and the International Telephone and Telegraph Company.
Funders:
Funding AgencyGrant Number
Office of Naval Research (ONR)UNSPECIFIED
International Telephone and Telegraph CompanyUNSPECIFIED
Issue or Number:8
DOI:10.1063/1.1702881
Record Number:CaltechAUTHORS:20141216-154119053
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20141216-154119053
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:52910
Collection:CaltechAUTHORS
Deposited By:INVALID USER
Deposited On:17 Dec 2014 04:05
Last Modified:10 Nov 2021 19:45

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