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Photoemission from Au and Cu into CdS

Mead, C. A. and Spitzer, W. G. (1963) Photoemission from Au and Cu into CdS. Applied Physics Letters, 2 (4). pp. 74-75. ISSN 0003-6951. doi:10.1063/1.1753781.

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Many metal-semiconductor surface barrier rectifiers show photosensitivity for photon energies (hv) less than the semiconductor energy gap (E_g). Cases in the literature include metals evaporated or electrodeposited on elemental and III-V compound semiconductor surfaces. In these studies the source of the low-energy photocurrent, when hv < E_g, was shown to be the photoemission of carriers over the Schottky barrier between the metal film and the semiconductor. An extensive investigation has been reported for a series of metals, particularly Cu and Au, electroplated on n-type CdS with the conclusion that here also photoemission from the metal is responsible for most of the low-energy photovoltage. However, recent studies have questioned this conclusion for the CdS case. One study proposed that the origin of the low-energy photovoltaic response is electron photoexcitation from Cu impurities located in the CdS and within a diffusion length of the space charge region. Hole conduction probably in the 3d Cu levels was postulated for these samples, which had ≈ 30-ppm Cu. A second study interpreted the results as a p·n junction photovoltaic effect.

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Additional Information:© 1963 American Institute of Physics. Received 18 December 1962: in final form 28 January 1963.
Issue or Number:4
Record Number:CaltechAUTHORS:20141216-160600955
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:52914
Deposited On:17 Dec 2014 03:54
Last Modified:10 Nov 2021 19:45

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