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Surface States on Semiconductor Crystals; Barriers on the Cd(Se:S) System

Mead, C. A. (1965) Surface States on Semiconductor Crystals; Barriers on the Cd(Se:S) System. Applied Physics Letters, 6 (6). pp. 103-104. ISSN 0003-6951. https://resolver.caltech.edu/CaltechAUTHORS:20141216-161517797

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Abstract

We report here measurements of surface barrier heights of metal contacts on Cd(Se:S) crystals in which a continuous transition is observed between the CdS case in which the barrier height varies as the metal work function to the CdSe case where the barrier height is essentially independent of the metal. The results have fundamental implications concerning the nature of the surface states and their relationship to the properties of the semiconductor.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1063/1.1754185DOIArticle
http://scitation.aip.org/content/aip/journal/apl/6/6/10.1063/1.1754185PublisherArticle
Additional Information:© 1965 American Institute of Physics. Received 19 January 1965. The author thanks W. G. Spitzer for many helpful discussions, A. Chodos for making the x-ray fluorescence measurements, D. C. Reynolds for supplying the crystals, H. M. Simpson for the fabrication of the devices, and V. Heine for supplying a preprint of his work. This work was supported in part by the Office of Naval Research and the International Telephone and Telegraph Company.
Funders:
Funding AgencyGrant Number
Office of Naval Research (ONR)UNSPECIFIED
International Telephone and Telegraph CompanyUNSPECIFIED
Subject Keywords:composition effects; Fermi level; work function; E
Issue or Number:6
Record Number:CaltechAUTHORS:20141216-161517797
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20141216-161517797
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:52916
Collection:CaltechAUTHORS
Deposited By: Kristin Buxton
Deposited On:17 Dec 2014 03:53
Last Modified:03 Oct 2019 07:45

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