Aven, Manuel and Mead, C. A. (1965) Electrical Transport and Contact Properties of Low Resistivity n Type Zinc Sulfide Crystals. Applied Physics Letters, 7 (1). pp. 8-10. ISSN 0003-6951. doi:10.1063/1.1754243. https://resolver.caltech.edu/CaltechAUTHORS:20141216-162020351
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Abstract
This Letter describes some electrical contact and transport properties of ZnS single crystals having room-temperature resistivities in the range of 1 to 10 ohm-cm. Previous electrical transport measurements on ZnS have been done mainly at high temperatures or under photoexcitation. Electrical contacts to ZnS which display ohmic characteristics at room temperature have been described by Alfrey and Cooke. A serious limitation to a more extensive investigation of the electrical properties of ZnS has been the difficulty in providing ZnS crystals with contacts which would stay ohmic at low temperatures. It has also been difficult to dope ZnS n-type without simultaneously introducing large concentrations of native acceptor defects.
| Item Type: | Article | |||||||||
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| Additional Information: | © 1965 The American Institute of Physics. Received 10 May 1965. Sponsored, in part, by the A. F. Cambridge Res. Lab. [Contract No. AF-19 (628)-4976] and, in part, by the Office of Naval Research [Contract No. Nonr-220(42)]. | |||||||||
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| Subject Keywords: | Hall effect; barrier height; work function; n-type conductivity; E | |||||||||
| Issue or Number: | 1 | |||||||||
| DOI: | 10.1063/1.1754243 | |||||||||
| Record Number: | CaltechAUTHORS:20141216-162020351 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20141216-162020351 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 52917 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | INVALID USER | |||||||||
| Deposited On: | 17 Dec 2014 03:51 | |||||||||
| Last Modified: | 10 Nov 2021 19:45 |
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