Lewicki, G. W. and Mead, C. A. (1966) Voltage Dependence of Barrier Height in AIN Tunnel Junctions. Applied Physics Letters, 8 (4). pp. 98-99. ISSN 0003-6951. doi:10.1063/1.1754505. https://resolver.caltech.edu/CaltechAUTHORS:20141216-162848152
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Abstract
We report measurements of barrier heights on AI-AIN-Mg thin-film structures as a function of applied voltage and insulator thickness. These results are in disagreement with currently accepted theories based upon image potential and/or field penetration of the electrodes.
| Item Type: | Article | |||||||||
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| Additional Information: | © 1966 The American Institute of Physics. Received 4 November 1965; in final form 20 January 1966. | |||||||||
| Subject Keywords: | photoemission; room temperature; E | |||||||||
| Issue or Number: | 4 | |||||||||
| DOI: | 10.1063/1.1754505 | |||||||||
| Record Number: | CaltechAUTHORS:20141216-162848152 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20141216-162848152 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 52918 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | INVALID USER | |||||||||
| Deposited On: | 17 Dec 2014 03:51 | |||||||||
| Last Modified: | 10 Nov 2021 19:45 |
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