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Voltage Dependence of Barrier Height in AIN Tunnel Junctions

Lewicki, G. W. and Mead, C. A. (1966) Voltage Dependence of Barrier Height in AIN Tunnel Junctions. Applied Physics Letters, 8 (4). pp. 98-99. ISSN 0003-6951. doi:10.1063/1.1754505.

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We report measurements of barrier heights on AI-AIN-Mg thin-film structures as a function of applied voltage and insulator thickness. These results are in disagreement with currently accepted theories based upon image potential and/or field penetration of the electrodes.

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Additional Information:© 1966 The American Institute of Physics. Received 4 November 1965; in final form 20 January 1966.
Subject Keywords:photoemission; room temperature; E
Issue or Number:4
Record Number:CaltechAUTHORS:20141216-162848152
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:52918
Deposited On:17 Dec 2014 03:51
Last Modified:10 Nov 2021 19:45

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