CaltechAUTHORS
  A Caltech Library Service

Voltage Dependence of Barrier Height in AIN Tunnel Junctions

Lewicki, G. W. and Mead, C. A. (1966) Voltage Dependence of Barrier Height in AIN Tunnel Junctions. Applied Physics Letters, 8 (4). pp. 98-99. ISSN 0003-6951. http://resolver.caltech.edu/CaltechAUTHORS:20141216-162848152

[img]
Preview
PDF - Published Version
See Usage Policy.

381Kb

Use this Persistent URL to link to this item: http://resolver.caltech.edu/CaltechAUTHORS:20141216-162848152

Abstract

We report measurements of barrier heights on AI-AIN-Mg thin-film structures as a function of applied voltage and insulator thickness. These results are in disagreement with currently accepted theories based upon image potential and/or field penetration of the electrodes.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1063/1.1754505DOIArticle
http://scitation.aip.org/content/aip/journal/apl/8/4/10.1063/1.1754505PublisherArticle
Additional Information:© 1966 The American Institute of Physics. Received 4 November 1965; in final form 20 January 1966.
Subject Keywords:photoemission; room temperature; E
Record Number:CaltechAUTHORS:20141216-162848152
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20141216-162848152
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:52918
Collection:CaltechAUTHORS
Deposited By: Kristin Buxton
Deposited On:17 Dec 2014 03:51
Last Modified:17 Dec 2014 03:51

Repository Staff Only: item control page