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Barrier energies in metal-silicon dioxide-silicon structures

Deal, B. E. and Snow, E. H. and Mead, C. A. (1966) Barrier energies in metal-silicon dioxide-silicon structures. Journal of Physics and Chemistry of Solids, 27 (11-12). pp. 1873-1879. ISSN 0022-3697. http://resolver.caltech.edu/CaltechAUTHORS:20141217-141254267

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Abstract

Metal-silicon dioxide barrier energies have been determined for six metals, Ag, Al, Au, Cu, Mg and Ni, deposited on thermally oxidized silicon. Results obtained by two different measurement methods, the photoemission technique and the MOS capacitance-voltage technique, are in excellent agreement with one another. Values of the barrier energy ϕ_M range from 2.3 eV for Mg to 4.2 eV for Ag and are roughly proportional to the electronegativities of the metals. The siliconsilicon dioxide barrier energy (measured from the silicon valence band) has also been determined and was found to be 4.35 eV independent of silicon orientation or type.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1016/0022-3697(66)90118-1DOIArticle
http://www.sciencedirect.com/science/article/pii/0022369766901181PublisherArticle
Additional Information:Copyright © 1966 Pergamon Press. Received 2 May 1966; in revised form 7 June 1966.
Record Number:CaltechAUTHORS:20141217-141254267
Persistent URL:http://resolver.caltech.edu/CaltechAUTHORS:20141217-141254267
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:52973
Collection:CaltechAUTHORS
Deposited By: Kristin Buxton
Deposited On:17 Dec 2014 22:37
Last Modified:17 Dec 2014 22:37

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