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Surface barriers on layer semiconductors: GaSe

Kurtin, Stephen and Mead, C. A. (1968) Surface barriers on layer semiconductors: GaSe. Journal of Physics and Chemistry of Solids, 29 (10). pp. 1865-1867. ISSN 0022-3697. https://resolver.caltech.edu/CaltechAUTHORS:20141217-150028682

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Abstract

Metallic surface barriers formed on the layer compound GaSe are studied by the photoresponse technique. The dependence of barrier potential vs. etectronegativity of the deposited metal is found to be linear with slope ≅ 0.6.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1016/0022-3697(68)90170-4DOIArticle
http://www.sciencedirect.com/science/article/pii/0022369768901704PublisherArticle
Additional Information:Copyright © 1968 Pergamon Press. Received 29 January 1968; in revised form 11 March 1968. This work was supported in part by the Office of Naval Research and the Jet Propulsion Laboratory.
Funders:
Funding AgencyGrant Number
Office of Naval Research (ONR)UNSPECIFIED
JPLUNSPECIFIED
Issue or Number:10
Record Number:CaltechAUTHORS:20141217-150028682
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20141217-150028682
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:52980
Collection:CaltechAUTHORS
Deposited By: Kristin Buxton
Deposited On:17 Dec 2014 23:35
Last Modified:03 Oct 2019 07:46

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