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Surface barriers on layer semiconductors: GaSe

Kurtin, Stephen and Mead, C. A. (1968) Surface barriers on layer semiconductors: GaSe. Journal of Physics and Chemistry of Solids, 29 (10). pp. 1865-1867. ISSN 0022-3697. doi:10.1016/0022-3697(68)90170-4.

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Metallic surface barriers formed on the layer compound GaSe are studied by the photoresponse technique. The dependence of barrier potential vs. etectronegativity of the deposited metal is found to be linear with slope ≅ 0.6.

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Additional Information:Copyright © 1968 Pergamon Press. Received 29 January 1968; in revised form 11 March 1968. This work was supported in part by the Office of Naval Research and the Jet Propulsion Laboratory.
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Office of Naval Research (ONR)UNSPECIFIED
Issue or Number:10
Record Number:CaltechAUTHORS:20141217-150028682
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:52980
Deposited On:17 Dec 2014 23:35
Last Modified:10 Nov 2021 19:46

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