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Currents through thin films of aluminum nitride

Lewicki, G. and Mead, C. A. (1968) Currents through thin films of aluminum nitride. Journal of Physics and Chemistry of Solids, 29 (7). pp. 1255-1267. ISSN 0022-3697. https://resolver.caltech.edu/CaltechAUTHORS:20141217-150418676

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Abstract

The current-voltage characteristics of thin film structures consisting of two metal electrodes separated by a thin insulating layer of AlN were measured as a function of insulator thickness. In thinner structures, the dependence of the current on voltage and insulator thickness was that expected from direct electron tunneling through a trapezoidal barrier. The characteristics were used to determine the barrier energies at the metal insulator interfaces and the energy-momentum relationship over a considerable portion of the AlN forbidden energy gap. In structures with thicker insulating regions, temperature-independent currents were observed which because of their dependence on voltage and insulator thickness could not be attributed to direct electron tunneling.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1016/0022-3697(68)90218-7DOIArticle
http://www.sciencedirect.com/science/article/pii/0022369768902187PublisherArticle
Additional Information:Copyright © 1968 Pergamon Press. Received 20 November 1967.
Issue or Number:7
Record Number:CaltechAUTHORS:20141217-150418676
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20141217-150418676
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:52981
Collection:CaltechAUTHORS
Deposited By: Kristin Buxton
Deposited On:17 Dec 2014 23:34
Last Modified:03 Oct 2019 07:46

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