Mead, C. A. (1966) Metal-semiconductor surface barriers. Solid-State Electronics, 9 (11-12). pp. 1023-1033. ISSN 0038-1101. doi:10.1016/0038-1101(66)90126-2. https://resolver.caltech.edu/CaltechAUTHORS:20141217-151530128
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Abstract
The physical principles underlying the metal-semiconductor barrier are discussed in the light of recent experimental results. A semi-empirical approach for predicting the type of contact to be expected at an arbitrary metal-semiconductor interface is presented.
| Item Type: | Article | |||||||||
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| Additional Information: | Copyright © 1966 Pergamon Press. Received 28 January 1966. Supported in part by the Office of Naval Research under Contract No. Nonr-220 (42) and the International Telephone and Telegraph Company. | |||||||||
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| Issue or Number: | 11-12 | |||||||||
| DOI: | 10.1016/0038-1101(66)90126-2 | |||||||||
| Record Number: | CaltechAUTHORS:20141217-151530128 | |||||||||
| Persistent URL: | https://resolver.caltech.edu/CaltechAUTHORS:20141217-151530128 | |||||||||
| Usage Policy: | No commercial reproduction, distribution, display or performance rights in this work are provided. | |||||||||
| ID Code: | 52985 | |||||||||
| Collection: | CaltechAUTHORS | |||||||||
| Deposited By: | INVALID USER | |||||||||
| Deposited On: | 17 Dec 2014 23:31 | |||||||||
| Last Modified: | 10 Nov 2021 19:46 |
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