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Electric field dependence of GaAs Schottky barriers

Parker, G. H. and McGill, T. C. and Mead, C. A. and Hoffman, D. (1968) Electric field dependence of GaAs Schottky barriers. Solid-State Electronics, 11 (2). pp. 201-204. ISSN 0038-1101. https://resolver.caltech.edu/CaltechAUTHORS:20141217-151846023

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Abstract

The bias dependence of the photoelectric barrier energy of n-GaAs-Al diodes has been measured. The devices were fabricated by cleavage of the GaAs in an evaporating stream of metal in a vacuum of 10^(−8) torr. The barrier energies at various bias levels were determined by extrapolation of the photoresponse vs. photon energy plots. The electric field dependence of the photoresponse was also measured at constant photon energy. The calculated change in barrier energy from the latter method was then compared with the changes in extrapolated values of barrier energy. A small systematic disagreement was observed and attributed to the effects of collection efficiency in the GaAs. The field dependence of Schottky barriers on 5×10^(16) GaAs was found to be in good agreement with that expected from the exponential charge distribution associated with the surface states which determine the barrier energy.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1016/0038-1101(68)90079-8DOIArticle
http://www.sciencedirect.com/science/article/pii/0038110168900798PublisherArticle
Additional Information:Copyright © 1968 Pergamon Press. Received 5 August 1967; in revised form 28 September 1967. This work was supported by the Office of Naval Research.
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Funding AgencyGrant Number
Office of Naval Research (ONR)UNSPECIFIED
Issue or Number:2
Record Number:CaltechAUTHORS:20141217-151846023
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20141217-151846023
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:52986
Collection:CaltechAUTHORS
Deposited By: Kristin Buxton
Deposited On:17 Dec 2014 23:30
Last Modified:03 Oct 2019 07:46

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