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Single phase, single orientation Cu_2O (100) and (110) thin films grown by plasma-assisted molecular beam epitaxy

Tolstova, Yulia and Wilson, Samantha S. and Atwater, Harry A. (2014) Single phase, single orientation Cu_2O (100) and (110) thin films grown by plasma-assisted molecular beam epitaxy. Journal of Crystal Growth, 408 . pp. 77-81. ISSN 0022-0248. doi:10.1016/j.jcrysgro.2014.10.045. https://resolver.caltech.edu/CaltechAUTHORS:20141219-114723467

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Abstract

Epitaxial growth of cuprous oxide (Cu_2O) has been achieved on (100) and (110) orientations of MgO by plasma-assisted molecular beam epitaxy. Growth was investigated using a pure oxygen plasma as well as a 90% Ar/10% O_2 plasma. Cu_2O films grown using pure oxygen on MgO (100) have a limited growth window and typically exhibit multiple phases and orientations. Films grown on MgO (110) using pure oxygen are phase stable and predominantly (110) oriented, with some (200) orientation present. Films grown using an Ar/O_2 plasma on MgO (100) have improved phase stability and a single (110) orientation. Growth on MgO (110) using an Ar/O_2 plasma yields highly reproducible (110) oriented single phase Cu_2O films with a much wider growth window, suggesting that this substrate orientation is preferable for Cu_2O phase stability.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1016/j.jcrysgro.2014.10.045DOIArticle
http://www.sciencedirect.com/science/article/pii/S0022024814007386PublisherArticle
ORCID:
AuthorORCID
Atwater, Harry A.0000-0001-9435-0201
Alternate Title:Single phase, single orientation Cu2O (100) and (110) thin films grown by plasma-assisted molecular beam epitaxy
Additional Information:© 2014 Elsevier B.V. Received 16 July 2014, Revised 15 October 2014, Accepted 21 October 2014, Available online 30 October 2014. The authors gratefully acknowledge support from the Dow Chemical Company under the earth abundant semiconductor project, as well as Carol Garland for TEM training and helpful assistance.
Funders:
Funding AgencyGrant Number
Dow Chemical CompanyUNSPECIFIED
Subject Keywords:A1. Crystal structure; A1. High resolution X-ray diffraction; A3. Molecular beam epitaxy; B1. Oxides; B2. Semiconducting materials
DOI:10.1016/j.jcrysgro.2014.10.045
Record Number:CaltechAUTHORS:20141219-114723467
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20141219-114723467
Official Citation:Yulia Tolstova, Samantha S. Wilson, Harry A. Atwater, Single phase, single orientation Cu_2O (100) and (100) thin films grown by plasma-assisted molecular beam epitaxy, Journal of Crystal Growth, Volume 410, 15 January 2015, Pages 77-81, ISSN 0022-0248, http://dx.doi.org/10.1016/j.jcrysgro.2014.10.045. (http://www.sciencedirect.com/science/article/pii/S0022024814007386)
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:53045
Collection:CaltechAUTHORS
Deposited By: Ruth Sustaita
Deposited On:19 Dec 2014 20:29
Last Modified:10 Nov 2021 19:47

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