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Phonon scattering mechanisms in suspended nanostructures from 4 to 40 K

Fon, W. and Schwab, K. C. and Worlock, J. M. and Roukes, M. L. (2002) Phonon scattering mechanisms in suspended nanostructures from 4 to 40 K. Physical Review B, 66 (4). Art. No. 045302. ISSN 0163-1829. doi:10.1103/PhysRevB.66.045302.

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We have developed specially designed semiconductor devices for the measurement of thermal conductance in suspended nanostructures. By means of a novel subtractive comparison, we are able to deduce the phonon thermal conductance of individual nanoscale beams of different geometry and dopant profiles. The separate roles of important phonon scattering mechanisms are analyzed and a quantitative estimation of their respective scattering rates is obtained using the Callaway model. Diffuse surface scattering proves to be particularly important in the temperature range from 4 to 40 K. The rates of other scattering mechanisms, arising from phonon-phonon, phonon-electron, and phonon-point defect interactions, also appear to be significantly higher in nanostructures than in bulk samples.

Item Type:Article
Related URLs:
URLURL TypeDescription
Fon, W.0000-0002-5447-2324
Schwab, K. C.0000-0001-8216-4815
Roukes, M. L.0000-0002-2916-6026
Additional Information:© 2002 The American Physical Society Received 12 February 2002; published 9 July 2002 We gratefully acknowledge support from the NSF under Grant No. DMR-9705411 and from DARPA/MTO/MEMS under Grant No. DABT63-98-1-0012.
Funding AgencyGrant Number
Defense Advanced Research Projects Agency (DARPA)DABT63-98-1-0012
Issue or Number:4
Record Number:CaltechAUTHORS:FONprb02
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:5311
Deposited By: Archive Administrator
Deposited On:09 Oct 2006
Last Modified:08 Nov 2021 20:24

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