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Modelling and simulation of integrated circuits

Maher, Mary Ann C. and Mead, Carver A. (1986) Modelling and simulation of integrated circuits. Computer-Aided Design, 18 (9). pp. 472-477. ISSN 0010-4485. doi:10.1016/0010-4485(86)90003-5.

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Describing integrated circuits based on their physical and topological properties leads naturally to efficient algorithms and device models for circuit simulation. Physically based relaxation algorithms exploit the local and sparse nature of the circuit interconnect. Models that directly represent the processes of charge flow extend naturally to integrated circuit devices allowing the distributed nature of the integrated transistor to be represented. This approach has been used to develop models for metal oxide semiconductors (MOS) and bipolar transistors. The model for the bipolar transistor has been generalized to describe the multicollector merged device structures of integrated injection logic.

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Additional Information:Copyright © 1986 Butterworth & Co. We are grateful to Dick Lyon, Massimo Sivilotti, and Lars Nielson for many valuable discussions. We would also like to acknowledge Glenn Gribble and Cal Jackson for their aid in preparing this manuscript. This work was supported by the System Development Foundation.
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System Development FoundationUNSPECIFIED
Subject Keywords:integrated circuit technology; modelling; simulation; integrated injection logic
Issue or Number:9
Record Number:CaltechAUTHORS:20141223-110109001
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:53148
Deposited On:23 Dec 2014 19:12
Last Modified:10 Nov 2021 19:48

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