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Modelling and simulation of integrated circuits

Maher, Mary Ann C. and Mead, Carver A. (1986) Modelling and simulation of integrated circuits. Computer-Aided Design, 18 (9). pp. 472-477. ISSN 0010-4485. https://resolver.caltech.edu/CaltechAUTHORS:20141223-110109001

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Abstract

Describing integrated circuits based on their physical and topological properties leads naturally to efficient algorithms and device models for circuit simulation. Physically based relaxation algorithms exploit the local and sparse nature of the circuit interconnect. Models that directly represent the processes of charge flow extend naturally to integrated circuit devices allowing the distributed nature of the integrated transistor to be represented. This approach has been used to develop models for metal oxide semiconductors (MOS) and bipolar transistors. The model for the bipolar transistor has been generalized to describe the multicollector merged device structures of integrated injection logic.


Item Type:Article
Related URLs:
URLURL TypeDescription
http://dx.doi.org/10.1016/0010-4485(86)90003-5DOIArticle
http://www.sciencedirect.com/science/article/pii/0010448586900035PublisherArticle
Additional Information:Copyright © 1986 Butterworth & Co. We are grateful to Dick Lyon, Massimo Sivilotti, and Lars Nielson for many valuable discussions. We would also like to acknowledge Glenn Gribble and Cal Jackson for their aid in preparing this manuscript. This work was supported by the System Development Foundation.
Funders:
Funding AgencyGrant Number
System Development FoundationUNSPECIFIED
Subject Keywords:integrated circuit technology; modelling; simulation; integrated injection logic
Issue or Number:9
Record Number:CaltechAUTHORS:20141223-110109001
Persistent URL:https://resolver.caltech.edu/CaltechAUTHORS:20141223-110109001
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:53148
Collection:CaltechAUTHORS
Deposited By: Kristin Buxton
Deposited On:23 Dec 2014 19:12
Last Modified:03 Oct 2019 07:47

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