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Measurement of the Electrical Resistance of n-Type Si Microwire/p-Type Conducting Polymer Junctions for Use in Artificial Photosynthesis

Bruce, Jared P. and Asgari, Sommayeh and Ardo, Shane and Lewis, Nathan S. and Oliver, Derek R. and Freund, Michael S. (2014) Measurement of the Electrical Resistance of n-Type Si Microwire/p-Type Conducting Polymer Junctions for Use in Artificial Photosynthesis. Journal of Physical Chemistry C, 118 (48). pp. 27742-27748. ISSN 1932-7447. doi:10.1021/jp509211k.

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The junction between n-type silicon microwires and p-type conducting polymer PEDOT:PSS (poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate)) was investigated using a soft contact method. Dopant levels within the microwires were varied during growth to give a highly-doped region for improved contact and a low-doped region for light absorption. The low-doped region of the microwires had a dopant density of 5 X 10(17) cm(-3) while the highly-doped region had an increased dopant density of 5 X 10(18) cm(-3) over similar to 20 mu m. Uniform, highly-doped microwires, with a dopant density of 4 X 10(19) cm(3), were used as a comparison. Regions of highly-doped n-type Si microwires (N-D = 5 X 10(18) cm(-3) and 4 X 10(19) cm(-3)) contacted by PEDOT:PSS showed a significantly lower junction resistance compared to the low-doped (3 X 10(17) cm(-3)) regions of the microwire. Junctions incorporating the metal catalyst used during growth were also investigated. Microwires with copper at the interface had similar currentvoltage characteristics to those observed for the highly-doped microwire/conducting polymer junction; however, junctions that incorporated gold exhibited significantly lower resistances, decreasing the iR contribution of the junction by an order of magnitude with respect to the total voltage drop in the entire structure.

Item Type:Article
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URLURL TypeDescription ItemSupporting Information
Ardo, Shane0000-0001-7162-6826
Lewis, Nathan S.0000-0001-5245-0538
Freund, Michael S.0000-0003-1104-2292
Additional Information:© 2014 American Chemical Society. Received: September 11, 2014. Revised: October 29, 2014. Published: October 29, 2014. Financial support from the Natural Sciences and Engineering Research Council (NSERC) of Canada, the Canada Foundation for Innovation (CFI), the Manitoba Research and Innovation Fund, and the University of Manitoba is gratefully acknowledged. The work reported made use of surface characterization infrastructure in the Manitoba Institute for Materials. This work was supported by a National Science Foundation (NSF) Center for Chemical Innovation (CCI) Powering the Planet (Grants CHE-0802907, CHE-0947829, and NSF-ACCF) and made use of the Molecular Materials Research Center of the Beckman Institute at Caltech and the Kavli Nanoscience Institute at Caltech. This research was undertaken, in part, thanks to funding from the Canada Research Chairs Program. S.A. acknowledges partial support from a U.S. Department of Energy, Office of Energy Efficiency and Renewable Energy (EERE) Postdoctoral Research Award, under the EERE Fuel Cell Technologies Program. This material is based in part (support for NSL) upon work performed by the Joint Center for Artificial Photosynthesis, a DOE Energy Innovation Hub, supported through the Office of Science of the U.S. Department of Energy under Award DE-SC0004993.
Group:CCI Solar Fuels, Kavli Nanoscience Institute, JCAP
Funding AgencyGrant Number
Natural Sciences and Engineering Research Council of Canada (NSERC)UNSPECIFIED
Canada Foundation for InnovationUNSPECIFIED
Manitoba Research and Innovation FundUNSPECIFIED
University of ManitobaUNSPECIFIED
Canada Research Chairs ProgramUNSPECIFIED
Department of Energy (DOE)DE-SC0004993
Issue or Number:48
Record Number:CaltechAUTHORS:20150109-083207621
Persistent URL:
Official Citation:Measurement of the Electrical Resistance of n-Type Si Microwire/p-Type Conducting Polymer Junctions for Use in Artificial Photosynthesis Jared P. Bruce, Sommayeh Asgari, Shane Ardo, Nathan S. Lewis, Derek R. Oliver, and Michael S. Freund The Journal of Physical Chemistry C 2014 118 (48), 27742-27748
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:53452
Deposited By: Ruth Sustaita
Deposited On:09 Jan 2015 17:55
Last Modified:10 Nov 2021 20:02

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