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Floating-Gate MOS Synapse Transistors

Diorio, Chris and Hasler, Paul and Minch, Bradley A. and Mead, Carver (1998) Floating-Gate MOS Synapse Transistors. In: Neuromorphic Systems Engineering. Kluwer international series in engineering and computer science. Analog circuits and signal processing. Vol.4. No.SECS 447. Kluwer Academic , Boston, pp. 315-337. ISBN 9780792381587.

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Our goal is to develop silicon learning systems. One impediment to achieving this goal has been the lack of a simple circuit element combining nonvolatile analog memory storage with locally computed memory updates. Existing circuits [63, 132] typically are large and complex; the nonvolatile floating-gate devices, such as EEPROM transistors. typically are optimized for binary-valued storage [17], and do not compute their own memory updates. Although floating-gate transistors can provide nonvolatile analog storage [1, 15], because writing the memory entails the difficult process of moving electrons through Si0_2, these devices have not seen wide use as memory elements in silicon learning systems.

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Additional Information:© 1998 Kluwer Academic. Lyn Dupré edited the manuscript. This work was supported by the Office of Naval Research, by the Advanced Research Projects Agency, by the Beckman Hearing Institute, by the Center for Neuromorphic Systems Engineering as a part of the National Science Foundation Engineering Research Center Program, and by the California Trade and Commerce Agency, Office of Strategic Technology.
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Office of Naval Research (ONR)UNSPECIFIED
Advanced Research Projects Agency (ARPA)UNSPECIFIED
Beckman Hearing InstituteUNSPECIFIED
Center for Neuromorphic Systems EngineeringUNSPECIFIED
California Trade and Commerce Agency, Office of Strategic TechnologyUNSPECIFIED
Series Name:Kluwer international series in engineering and computer science. Analog circuits and signal processing
Issue or Number:SECS 447
Record Number:CaltechAUTHORS:20150109-144208064
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:53517
Deposited By: Kristin Buxton
Deposited On:09 Jan 2015 23:17
Last Modified:10 Nov 2021 20:03

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