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Simulation of a long term memory device with a full bandstructure Monte Carlo approach

Lee, Christopher H. and Ravaioli, Umberto and Hess, Karl and Mead, Carver A. and Hasler, Paul (1995) Simulation of a long term memory device with a full bandstructure Monte Carlo approach. IEEE Electron Device Letters, 16 (8). pp. 360-362. ISSN 0741-3106. doi:10.1109/55.400738.

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Simulations of charging characteristics of a long term memory device, based on a floating gate structure, are presented. The analysis requires the inclusion of hot electron effects and a detailed account of the semiconductor bandstructure, because device operation is based on the injection of electrons into the gate oxide high above the silicon conduction band edge. We have developed a Monte Carlo simulator based on a full bandstructure approach which accurately accounts for the high energy tail of the electron distribution function. For practical simulation of the prototype structure, with 3.0-pm source-drain separation, the simulator is used as a post-processor on the potential profile obtained from a PISCES IIB drift-diffusion solution. The computations are in quantitative agreement with experimental results for the gate injection current, measured at fixed drain and gate biases.

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Additional Information:© 1995 IEEE. Manuscript received January 31, 1995; revised April 26, 1995. This work was supported by the Joint Services Electronics Program, Grant N00014-90-J-1270. IEEE Log Number 9413026.
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Office of Naval Research (ONR)N00014-90-J-1270
Joint Services Electronics ProgramUNSPECIFIED
Issue or Number:8
Record Number:CaltechAUTHORS:20150112-160605437
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:53593
Deposited On:13 Jan 2015 02:14
Last Modified:10 Nov 2021 20:04

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