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5C3 - GaAs as an electrooptic modulator at 10.6 microns

Yariv, A. and Mead, C. A. and Parker, J. V. (1966) 5C3 - GaAs as an electrooptic modulator at 10.6 microns. IEEE Journal of Quantum Electronics, 2 (8). pp. 243-245. ISSN 0018-9197. doi:10.1109/JQE.1966.1074037.

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The electrooptic properties of a number of semi-conductors were investigated. Of particular interest was the possibility of using these materials for modulation o infrared radiation, since many of the efficient modulation materials for the shorter wavelengths, such as KTN and KDP, are opaque in this region. We have investigated experimentally the modulation potential of a number of semiconducting materials. These include ZnS and GaAs of the noncentrosymmetric 43m class. The electrooptic coefficients were determined by using a CO_2, 10.6μ and a He-Ne 3.39 μ laser as the radiation source. Based on our experiments, GaAs appears as a suitable material for infrared modulation at λ > 10μ.

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Additional Information:© 1966 IEEE. Manuscript received May 5, 1966. This work was supported by the U. S. Air Force Systems Engineering Group under Contract AF33(615)-2800, and by the Office of Naval Research under Contract Nonr 220(50). This paper was presented at the 1966 International Quantum Electronics Conference, Phoenix, Ariz.
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U. S. Air Force Systems Engineering GroupAF33(615)-2800
Office of Naval Research (ONR)Nonr 220(50)
Issue or Number:8
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Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:53704
Deposited On:14 Jan 2015 20:40
Last Modified:10 Nov 2021 20:05

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