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Observations of dislocations in zinc by chemical etching

Miller, J. Wayne and Nagata, Norio and Vreeland, T., Jr. (1974) Observations of dislocations in zinc by chemical etching. Materials Science and Engineering, 13 (2). pp. 121-124. ISSN 0025-5416. doi:10.1016/0025-5416(74)90180-3.

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A new chemical etch has been found to be effective for revealing dislocations intersecting the basal planes of zinc. The etch works for surface whose orientation is within 0.5° of the basal plane. Evidence is available that there is a one-to-one correspondence between etch figures and dislocations. Crystals with densities as high as 10^7 dislocations per cm^2 have been successfully etched.

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Additional Information:© 1974 Elsevier Sequoia S.A., Lausanne. Received February 1, 1973. The work reported herein was sponsored by the U.S. Atomic Energy Commission and the California Institute of Technology. We wish to express our appreciation to Mr. Alvin Illig for his careful attention in the preparation of specimens used in this study and for his assistance with the photographic work. J. Wayne Miller wishes to express his thanks for fellowship support granted by the Department of Health, Education and Welfare under the National Defense Education Act. CALT-767-P3-13.
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Atomic Energy CommissionUNSPECIFIED
Department of Health, Education and WelfareUNSPECIFIED
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Issue or Number:2
Record Number:CaltechAUTHORS:20150121-082335770
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Official Citation:J. Wayne Miller, Norio Nagata, T. Vreeland Jr., Observations of dislocations in zinc by chemical etching, Materials Science and Engineering, Volume 13, Issue 2, February 1974, Pages 121-124, ISSN 0025-5416, (
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:53920
Deposited By: Tony Diaz
Deposited On:21 Jan 2015 23:32
Last Modified:10 Nov 2021 20:24

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