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Strain measurement in heteroepitaxial layers - Silicon on sapphire

Vreeland, Thad, Jr. (1986) Strain measurement in heteroepitaxial layers - Silicon on sapphire. Journal of Materials Research, 1 (5). pp. 712-716. ISSN 0884-2914. doi:10.1557/JMR.1986.0712.

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An x-ray diffraction technique is presented for the determination of the strain tensor in an epitaxial layer grown on a crystallographically distinct substrate. The technique utilizes different diffracting planes in the layer and in a reference crystal fixed to the layer, and is illustrated by application to an ∼4000 Å (001) silicon layer grown on a (0112) sapphire wafer. The principal strains were measured, and the measured strain normal to the layer was found to agree with the normal strain calculated from the measured in-plane strains within the experimental uncertainty of strain measurement. The principal stresses in the plane of the silicon film, calculated from the measured strains were −0.92 ± 0.16 GPa in the [100] direction and −0.98 ± 0.17 GPa in the [010] direction.

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Additional Information:© 1986 Materials Research Society. Received 5 May 1986; accepted 12 August 1986. Professor R. W. Cahn kindly provided constructive comments on the manuscript. This work was supported by the National Science Foundation, under the Caltech Materials Research Group Grant No. DMR84-21119.
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Issue or Number:5
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Official Citation: Thad Vreeland (1986). Strain measurement in heteroepitaxial layers—Silicon on sapphire. Journal of Materials Research, 1, pp 712-716. doi:10.1557/JMR.1986.0712.
Usage Policy:No commercial reproduction, distribution, display or performance rights in this work are provided.
ID Code:54012
Deposited By: Tony Diaz
Deposited On:23 Jan 2015 18:07
Last Modified:10 Nov 2021 20:26

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